Hostname: page-component-7479d7b7d-pfhbr Total loading time: 0 Render date: 2024-07-11T08:30:36.016Z Has data issue: false hasContentIssue false
  • English
  • Français

Monitoring Of HF/H2O Treated Silicon Surfaces Using Noncontact Surface Charge Measurements

Published online by Cambridge University Press:  15 February 2011

P. Roman ,
D. Hwang ,
K. Torek ,
J. Ruzyllo  and
E. Kamieniecki
P. Roman
Affiliation:
Electronic Materials and Processing Research Laboratory, The Pennsylvania State University, University Park, PA 16802
D. Hwang
Affiliation:
Electronic Materials and Processing Research Laboratory, The Pennsylvania State University, University Park, PA 16802
K. Torek
Affiliation:
Electronic Materials and Processing Research Laboratory, The Pennsylvania State University, University Park, PA 16802
J. Ruzyllo
Affiliation:
Electronic Materials and Processing Research Laboratory, The Pennsylvania State University, University Park, PA 16802
E. Kamieniecki
Affiliation:
QC Solutions, Inc., Woburn, MA 01801
Get access

Abstract

In this work, a new commercial system allowing non-contact measurement of the surface charge is used to monitor the condition of the silicon surface following HF/water etch. Results obtained demonstrate that by monitoring changes of surface charge using this system, a truly non-invasive, instant and easy to carry out characterization of Si surfaces after HF/water etch can be accomplished. The results show that HF/water exposure adds positive charge to the silicon surface. Change in the surface charge, considered to be indicative of the change in the electro-chemical condition of the surface, appears to precede initiation of the oxide etching process, and is proposed to be a factor in initiating etching reactions that involve mainly negatively charged species.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 386: Symposium O – Ultraclean Semiconductor Processing Technology and Surface , 1995 , 401
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Philipossian, A., J. Electrochem. Soc., 139, 2956 (1992).Google Scholar
2. Ohmi, T. in Proc. Third Intern. Symp. on Wafer Cleaning Technol. in Semicond. Device Manufacturing, edited by Ruzyllo, J. and Novak, R. (The Electrochem. Soc. Proc. 94–7, Pennington, NJ, 1994) pp. 3–13.Google Scholar
3. Technical Information, SCP-1 10, QC Solutions, Inc., Woburn, MA 01801.Google Scholar
4. Kamieniecki, E., Roman, P., Hwang, D., and Ruzyllo, J. in Proc. Second Intern. Symp. On Ultra-Clean Processing of Silicon Surfaces UCPSS '94, edited by Heyns, M. (Acco, Leuven, 1994) pp. 189–192.Google Scholar
5. Kamieniecki, E. and Foggiato, G.J., in Handbook of Semicond. Wafer Cleaning Technol., edited by Kern, W. (Noyes Publications, 1993) pp.497–536.Google Scholar