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Molecular Beam Epitaxy of GexSi1-x/(Si, Ge) Strained-Layer Heterostructures and Superlattices

Published online by Cambridge University Press:  26 February 2011

J. C. Bean
J. C. Bean*
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
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Abstract

This paper reviews recent work on GexSi1-x/Si(100) strained-layer epitaxy and reports new findings on GexSi1-x/Si(111) and GexSil1-x/Ge(100) growth as well as results on modulation doping. Layer synthesis and evaluation techniques are described along with tabulations of strain and critical layer thickness data. Evaluation techniques include Low Energy Electron Diffraction, Rutherford backscattering, X-ray diffraction, Raman scattering and cross-sectional Transmission Electron Microscopy. Synthesized structures range from simple heterojunctions to 100 period superlattices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 37: Symposium D – Layered Structures, Epitaxy, and Interfaces , 1984 , 245
Copyright
Copyright © Materials Research Society 1985

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