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Molecular Beam Epitaxial Growth Over Multiple Wafers Using an Indium-Free Mounting Technique

Published online by Cambridge University Press:  26 February 2011

T. Igarashi ,
J. Saito ,
Y. Okamoto ,
T. Ishikawa  and
K. Kondo
T. Igarashi
Affiliation:
Fujitsu Limited, 10–1 Morinosato-Wakamiya, Atsugi 243–01, Japan
J. Saito
Affiliation:
Fujitsu Limited, 10–1 Morinosato-Wakamiya, Atsugi 243–01, Japan
Y. Okamoto
Affiliation:
Fujitsu Limited, 10–1 Morinosato-Wakamiya, Atsugi 243–01, Japan
T. Ishikawa
Affiliation:
Fujitsu Limited, 10–1 Morinosato-Wakamiya, Atsugi 243–01, Japan
K. Kondo
Affiliation:
Fujitsu Limited, 10–1 Morinosato-Wakamiya, Atsugi 243–01, Japan
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Abstract

An indium-free substrate mounting technique was developed for a 190-mm diameter substrate holder on which three 3-inch GaAs substrates are mounted. Reduction of the heat conduction between the substrates and the holder kept the temperature variation in the substrate within ±5° C. Highly uniform epitaxial layers were grown with low residual impurity concentrations using this technique. The variations in layer thickness and carrier concentration of Si-doped GaAs and AlGaAs epitaxial layers were within ±1% over the substrate holder. High mobility of a two-dimensional electron gas in a selectively doped GaAs/N-AlGaAs heterostructure was obtained uniformly over three 3-inch wafers. Since the holder was designed to hold the wafers without stress, no stress-related degradation of the surface morphology was observed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 102 , 1987 , 503
Copyright
Copyright © Materials Research Society 1988

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References

REFERENCES

1.Saito, J., Igarashi, T., Nakamura, T., kondo, K., and Shibatomi, A., J. Cryst. Growth 81, 188 (1987)Google Scholar
2.Erickson, L. P., Carpenter, G. L., Seibel, D. D., Palmberg, P. W., Pearah, P., Kopp, W., and Morkoý, H., J. Vac. Sci. Technol. B 3 (2), 536 (1985)Google Scholar
3.Oe, K. and Imamura, Y., Jpn. J. Appl. Phys. 24 (6), 779 (1985)Google Scholar
4.Mars, D. E. and Miller, J. N., J. Vac. Sci. Technol. B 4 (2), 571 (1986)Google Scholar
5.Hellman, E. S., Pitner, P. M., Harwit, A., Liu, D., Yoffe, G. W., Harris, J. S. Jr, Caffee, B., and Hierl, T., J. Vac. Sci. Technol. B 4 (2), 574 (1986)Google Scholar
6.SpringThorpe, A. J. and Mandeville, P., J. Vac. Sci. Technol. B 4 (4), 853 (1986)Google Scholar
7.Hoke, W. E., Lyman, P. S., and Labossier, W. H.. J. Vac. Sci. Technol. B 5 (3), 734 (1987)Google Scholar
8.Saito, J., Ishikawa, T., Nakamura, T., Nanbu, K., Kondo, K., and Shibatomi, A., Jpn. J. Appl. Phys. 25 (8), 1216 (1986)Google Scholar
9.Gray, D. E., American Institute of Physics Handbook, 3rd ed. (McGraw- Hill, New York, 1972), p. 4–298Google Scholar
10.Hiyamizu, S., Saito, J., Nanbu, K., and Ishikawa, T., Jpn. J. Appl. Phys. 22 (10), L609 (1983)Google Scholar