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Modifying Crystallographic Orientations of Polycrystalline Si Films Using Ion Channeling

Published online by Cambridge University Press:  25 February 2011

K. T-Y. Kung ,
R. B. Ivepson  and
R. Reif
K. T-Y. Kung
Affiliation:
Department of Electrical Engineering and Computer ScienceMassachusetts Institute of technology, Cambridge, MA 02139
R. B. Ivepson
Affiliation:
Department of Electrical Engineering and Computer ScienceMassachusetts Institute of technology, Cambridge, MA 02139
R. Reif
Affiliation:
Department of Electrical Engineering and Computer ScienceMassachusetts Institute of technology, Cambridge, MA 02139
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Abstract

Polycrystalline silicon films 4800 Å thick deposited via low pressure chemical vapor deposition on oxidized silicon wafers have been amorphized by silicon ion implantation and subsequently recrystallized at 700°C. Due to channeling of the ions through grains whose <110> axes were sufficiently parallel to the beam, these grains survived the implantation step and acted as seed crystals for the solid-phase epitaxial regrowth of the film. This work suggests the feasibility of combining ion implantation and furnace annealing to generate large-grain, uniformly oriented polycrystal1ine films on amorphous substrates. It is a potential low-temperature silicon-on-insulator technology.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 35: Symposium A – Energy Beam-Solid Interactions and Transient Thermal Processing/1984 , 1984 , 727
Copyright
Copyright © Materials Research Society 1985

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References

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