Hostname: page-component-77c89778f8-gq7q9 Total loading time: 0 Render date: 2024-07-18T15:08:46.493Z Has data issue: false hasContentIssue false
  • English
  • Français

Modified Triode Plasma Configuration Allowing Precise Control of Ion-Energy for Preparing High Mobility a-Si:H

Published online by Cambridge University Press:  10 February 2011

G. Ganguly ,
T. Ikeda ,
I. Sakata  and
A. Matsuda
G. Ganguly
Affiliation:
Electrotechnical Laboratory, Tsukuba City, lbaraki, 305, Japan K. Kato, S. lizuka and N. Sato, Tohoku University, Sendai, 980-77, Japan
T. Ikeda
Affiliation:
Electrotechnical Laboratory, Tsukuba City, lbaraki, 305, Japan K. Kato, S. lizuka and N. Sato, Tohoku University, Sendai, 980-77, Japan
I. Sakata
Affiliation:
Electrotechnical Laboratory, Tsukuba City, lbaraki, 305, Japan K. Kato, S. lizuka and N. Sato, Tohoku University, Sendai, 980-77, Japan
A. Matsuda
Affiliation:
Electrotechnical Laboratory, Tsukuba City, lbaraki, 305, Japan K. Kato, S. lizuka and N. Sato, Tohoku University, Sendai, 980-77, Japan
Get access

Abstract

We have previously shown that the carrier drift mobility in amorphous silicon can be enhanced by optimizing the ion-bombardment energy during growth on conducting substrates. However, there exists a lack of reproducibility of samples exhibiting high mobility which we attribute to the rf field induced fluctuation of the plasma potential in a conventional (Te ≈ 2eV) silane plasma. Here we introduce an enclosed plasma configuration that allows us to confine the effect of the rf field and therefore obtain a low-electron-temperature (Te ≈ 0.1 eV) silane plasma as determined from Langmuir probe measurements. The measured ion-energy distributions correlate with those for electrons and the mean ion-energy can be controlled by biasing the substrate which allows us to reproducibly fabricate high drift mobility amorphous silicon.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 420: Symposium A – Amorphous Silicon Technology-1996 , 1996 , 347
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Ganguly, G. and Matsuda, A., MRS Symp. Proc. 258, 39 (1992); Jpn. J. Appl. Phys. 31, L-1269 (1992); Phys. Rev. B47, 3661 (1993); J. Non-Cryst. Solids, 164–166, 31 (1993).Google Scholar
2. Ganguly, G. and Matsuda, A., MRS Symp. Proc. 336, 7 (1994).Google Scholar
3. Das, D., Shirai, H., Hanna, J., and Shimizu, I., Jpn. J. Appl. Phys. 30, L–239 (1991)Google Scholar
4. Ganguly, G. and Matsuda, A., J. Non-Cryst. Solids, to be published (1996).Google Scholar
5. Kato, K., lizuka, S. and Sato, N., Proc. 11th Symp. Plasma Process.,1994, p-135.Google Scholar