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Modified Optically Detected Magnetic Resonance Technique for Studies of Defects in Si and GaAs

Published online by Cambridge University Press:  25 February 2011

W.M. Chen  and
B. Monemar
W.M. Chen
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, SWEDEN
B. Monemar
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, SWEDEN
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Abstract

We discuss one of the major difficulties, namely the strong free carrier induced background signal, in studies of defects in Si and GaAs by optically detected magnetic resonance (ODMR) technique. A modified ODMR technique, namely delayed ODMR, is presented and is shown to be very successful in overcoming this difficulty.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 85
Copyright
Copyright © Materials Research Society 1990

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References

1 Cavenett, B.C., Adv. in Phys. 30, 475 (1981).Google Scholar
2 Chen, W.M., Monemar, B. and Godlewski, M., in Defect and Diffusion Forum, Vol.62/63, edited by von Bardeleben, H.J. (Trans, tech. Publications, Aedermannsdorf, 1989) p.133.Google Scholar
3 Lee, K.M., O'Donnell, K.P., Weber, J., Cavenett, B.C. and Watkins, G.D., Phys. Rev. Lett. 48, 37 (1982).Google Scholar
4 Weber, J. and Watkins, G.D., in Proc. 13th Int. Conf. on Defects in Semiconductors, Coronado, edited by Kimerling, L.C. and Parsey, J.M. Jr. (The Metallurgical Society of AIME, Warrendale, PA, 1985) p.661.Google Scholar
5 Kennedy, T.A. and Wilsey, N.D., Phys. Rev. B32, 6942 (1985).Google Scholar
6 Gislason, H.P. and Watkins, G.D., Phys. Rev. B32, 6945 (1985).Google Scholar
7 Gislason, H.P. and Watkins, G.D., Phys. Rev. B33, 2957 (1986).Google Scholar
8 van Kesteren, H.W., Cosman, E.C., Greidanus, F.J.A.M., Dawson, P., Moore, K.J. and Foxon, C.T., Phys. Rev. Lett. 61,129 (1988).Google Scholar
9 Romestain, R. and Weisbuch, C., Phys. Rev. Lett. 45, 2067 (1980).Google Scholar
10 Cavenett, B.C. and Pakulis, E.J., Phys. Rev. B32, 8449 (1985).Google Scholar
11 Pakulis, E.J. and Northrop, G.A., Appl. Phys. Lett. 50,1672 (1987).Google Scholar
12 Godlewski, M., Weman, H., Wang, F.P., Monemar, B., Chen, W.M. and Zhao, Q.X., in Defects in Electronic Materials, edited by Stavola, M., Oearton, S.J. and Davies, G. (Mat. Res. Soc. Symp. Proc. 104 1988) pp.117–120.Google Scholar
13 Chen, W.M., Zhao, Q.X., Ahlström, M. and Monemar, B., in The Physics of Semiconductors, edited by Zawadzki, W. (Institute of Physics, Polish Academy of Sciences, Warsaw, 1988) p.279.Google Scholar
14 Wang, F.P., Monemar, B. and Ahlström, M., Phys. Rev. B40, 11195 (1989).Google Scholar
15 Chen, W.M., Holtz, P.O., Monemar, B., Sundaram, M., Merz, J.L. and Gossard, A.C., these proceedings.Google Scholar
16 Monemar, B. and Samuelson, L., Phys. Rev. B18, 809 (1978).Google Scholar
17 Dawson, P., Cavenett, B.C. and Sowersby, G., Solid State Electronics 21, 1451 (1978).Google Scholar
18 Davies, J.J., Cox, R.T. and Nicholls, J.E., Phys. Rev. B30, 4516 (1984).Google Scholar
19 Thewalt, M.L.W., Nissen, M., Beckett, D.J.S. and Charbonneau, S., in Proc. 3rd Int. Conf. on Shallow Impurities in Semiconductors, ed. B. Monemar (Inst. of Phys. Conf. Series Vol.95, Bristol, 1989) p.505.Google Scholar
20 Singh, M., Lightowlers, E.C. and Davies, G., in Proc. E-MRS 1989 Spring Meeting, Strasbourg, May 30-June 2,1989.Google Scholar