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Modifications in Gap State Distribution Upon High Energy Electron Bombardment in n Type Hydrogenated Amorphous Silicon

Published online by Cambridge University Press:  26 February 2011

Suvarna Babras ,
S.V. Bhoraskar  and
V.G. Bhide
Suvarna Babras
Affiliation:
School of Energy Studies, Department of Physics, University oF Poona, Pune-411 007, India.
S.V. Bhoraskar
Affiliation:
School of Energy Studies, Department of Physics, University oF Poona, Pune-411 007, India.
V.G. Bhide
Affiliation:
School of Energy Studies, Department of Physics, University oF Poona, Pune-411 007, India.
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Abstract

Modifications in the structural parameters of n type a-Si:H due to bombardment of different doses of 10 keV and 1 MeV electrons and the consequent changes in the gap state distribution are studied. A systematic dependance of the changes on the energy and dosage of electrons is observed. The Deep Level Transient Spectroscopy results reveal that apart from increasing the gap state density over a broad energy range, the electron bombardment also modifies the charge state of the defect, which is conclusively brought out by the result of C-V measurements. An understanding of the reason behind such modifications is sought by studying the structural parameters of the bombarded films directly with the help of Laser Raman Spectroscopy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 209: Symposium K – Defects in Materials , 1990 , 585
Copyright
Copyright © Materials Research Society 1991

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References

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