Hostname: page-component-848d4c4894-m9kch Total loading time: 0 Render date: 2024-05-01T10:49:53.088Z Has data issue: false hasContentIssue false
  • English
  • Français

Modification of Visible Light Emission from Silicon Nanocrystals as a Function of Size, Electronic Structure, and Surface Passivation

Published online by Cambridge University Press:  09 August 2011

M.V. Wolkin ,
J. Jorne ,
P.M. Fauchet ,
G. Allan  and
C. Delerue
M.V. Wolkin
Affiliation:
Materials Science Program, Department of Chemical EngineeringUniversity of Rochester, Rochester NY 14627, USA
J. Jorne
Affiliation:
Department of Chemical Engineering, University of Rochester, Rochester NY 14627, USA
P.M. Fauchet
Affiliation:
Department of Electrical and Computer EngineeringUniversity of Rochester, Rochester NY 14627, USA
G. Allan
Affiliation:
IEMN-ISEN, Lille, FRANCE
C. Delerue
Affiliation:
IEMN-ISEN, Lille, FRANCE
Get access

Abstract

The effect of surface passivation and crystallite size on the photoluminescence of porous silicon is reported. Oxygen-free porous silicon samples with medium to ultra high porosities have been prepared by using electrochemical etching followed by photoassisted stain etching. As long as the samples were hydrogen-passivated the PL could be tuned from the red (750nm) to the blue (400nm) by increasing the porosity. We show that when surface oxidation occurred, the photoluminescence was red-shifted. For sizes smaller than 2.8nm, the red shift can be as large as 1eV but for larger sizes no shift has been observed. Comparing the experimental results with theoretical calculations, we suggest that the decrease in PL energy upon exposure to oxygen is related to recombination involving an electron or an exciton trapped in Si=O double bonds. This result clarifies the recombination mechanisms in porous silicon.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 536: Symposium F – Microcrystalline & Nanocrystalline Semiconductors - 1998 , 1998 , 185
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Cullis, A. G., Canham, L. T. and Calcott, P. D. J., J. Appl. Phys. 82, 909 (1997).Google Scholar
[2] Fauchet, P. M., J. Lumin. 70, 294 (1996).Google Scholar
[3] Canham, L. T., Appl. Phys. Lett. 57, 1046 (1990).Google Scholar
[4] Proot, J.P., Delerue, C., and Allan, G., Appl. Phys. Lett. 61, 1948 (1992).Google Scholar
[5] Koch, F., Petrova-Koch, V., Muschik, T., Nikolov, A. and Gavrilenko, V., Mat. Res. Soc. Symp. Proc. 283, 197 (1993).Google Scholar
[6] Qin, G. G. and Jia, Y. Q., Solid state Commun. 86, 559 (1993)Google Scholar
[7] Xu, Z. Y., Gal, M., and Gross, M., Appl. Phys. Lett. 60, 1375 (1992)Google Scholar
[8] Wolkin, M. V., Jorne, J., Fauchet, P. M., Allan, G. and Delerue, C., Phys. Rev. Lett. 82, 197 (1999)Google Scholar
[9] Koyama, H. and Koshida, N., J. Appl. Phys. 74, 6365 (1993)Google Scholar
[10] Malone, C. and Jorne, J., Appl. Phys. Lett. 70, 3537 (1997)Google Scholar
[11] Behren, J. von, Buuren, T. Van, Zacharias, M., Chimowitz, E. H. and Fauchet, P. M., Solid State Comm. 105, 317 (1998).Google Scholar
[12] Mizuno, H., Koyama, H. and Koshida, N., Appl. Phys. Lett. 69, 3779 (1996).Google Scholar
[13] Herman, F. and Kasowski, R. V., J. Vac. Sci. Technol. 19, 395 (1981).Google Scholar