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Modification of Thermoelectric Properties Using Insertion Techniques

Published online by Cambridge University Press:  10 February 2011

E. Hatzikraniotis ,
Th. Kyratsi ,
K. Chrissafis  and
K. M. Paraskevopoulos
E. Hatzikraniotis
Affiliation:
Department of Physics - Solid State Physics Section Aristotle University of Thessaloniki, 54006 Thessaloniki, GREECE
Th. Kyratsi
Affiliation:
Department of Physics - Solid State Physics Section Aristotle University of Thessaloniki, 54006 Thessaloniki, GREECE
K. Chrissafis
Affiliation:
Department of Physics - Solid State Physics Section Aristotle University of Thessaloniki, 54006 Thessaloniki, GREECE
K. M. Paraskevopoulos
Affiliation:
Department of Physics - Solid State Physics Section Aristotle University of Thessaloniki, 54006 Thessaloniki, GREECE
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Abstract

In this work is presented the application insertion techniques for the modification of the performance of thermoelectric materials. The results indicate that in cases as in Bi2Se3 compounds where insertion of foreign species in the lattice is possible due to its particular crystal structure, the insertion technique could be proved a valuable easy to apply and cost effective, alternative to doping technique. The techniques can produce homogeneous materials with electronic and thermoelectric properties finely tuned.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 545: Symposium Z – Thermoelectric Materials 1998 - The Next Generation… , 1998 , 149
Copyright
Copyright © Materials Research Society 1999

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References

1. Bhandari, C.M. and Rowe, D.M. in CRC Handbook of Thermoelectrics, ed. Rowe, D.M., CRC Press N.Y. 1995, pp.43 Google Scholar
2. Sofo, J.O. and Mahan, G.D., Phys.Rev B49, 4565, (1994)CrossRefGoogle Scholar
3. Liang, Y. in Intercalation in Layered Materials, ed. Dresselhaous, M.S., 1986, Plenum Press N.Y. Google Scholar
4. Atabaeva, E. Ya., Bendeliani, N.A. and Popova, S.V., Soy. Physics Solid State V 15, 2345 (1973)Google Scholar
5. Paraskevopoulos, K.M., Hatzikraniotis, E., Chrissafis, K., Alexiadis, K., Stoemenos, J., Economou, N.A. and Balkanski, M., Mat.Sci. and Engin. (B) 1, 147 (1988).CrossRefGoogle Scholar
6. Kyratsi, Th., Hatzikraniotis, E., Paraskevopoulos, K.M. and Chrissafis, K., Ionics 3, 305 (1997)CrossRefGoogle Scholar
7. Kalampokis, A., Hatzikraniotis, E., and Paraskevopoulos, K.M., Mat. Res. Bul., 33 (9), 1356 (1998)CrossRefGoogle Scholar
8. Krost, A. in Landolt-Bornstein Neue Serie, Vol. 17, 1983, pp. 269–271.Google Scholar
9. Gorbecht, H., Seeck, S.,: Z. Phys. 222, 93 (1969)Google Scholar
10. Pauw, Van der, Phillips Res. Repts. 13, 1 (1958)Google Scholar
11. Compans, E., Rev. Sci. Instrum. 60 (8), 2715 (1989)CrossRefGoogle Scholar
12. Moss, T.S., Optical Properties of Semiconductors, 1959, Butterworths, London Google Scholar
13. Tichy, L. and Horak, J., Phys. Rev. B 19, 1126 (1979)CrossRefGoogle Scholar
14. Kireev, P.S., Semiconductor Physics, Mir Publ, Moscow, 1978, p. 234 Google Scholar
15. Hatzikraniotis, E., Paraskevopoulos, K.M. and Chrissafis, K., Proc. 20th ICPS, ed. Anastassakis, E.M. and Johanopoulos, J.D., World Scientific, vol. 3 p. 1799 (1993)Google Scholar
16. Zawadski, W., Adv. Phys. 23, 435 (1974).CrossRefGoogle Scholar