Hostname: page-component-848d4c4894-sjtt6 Total loading time: 0 Render date: 2024-06-23T17:02:20.198Z Has data issue: false hasContentIssue false
  • English
  • Français

Modification of the Surface Band-Bending of A Silicon CCD for Low-Energy Electron Detection

Published online by Cambridge University Press:  03 September 2012

Aimée L. Smith ,
Qiuming Yu ,
S. T. Elliott ,
T.A. Tombrello  and
Shouleh Nikzad
Aimée L. Smith
Affiliation:
currently at Massachusetts Institute of Technology, Cambridge, MA 02139
Qiuming Yu
Affiliation:
Center for Space Microelectronic Technology, Jet Propulsion laboratory California Institute of Technology, Pasadena, CA 91109
S. T. Elliott
Affiliation:
Center for Space Microelectronic Technology, Jet Propulsion laboratory California Institute of Technology, Pasadena, CA 91109
T.A. Tombrello
Affiliation:
California Institute of Technology, Pasadena, CA 91109
Shouleh Nikzad
Affiliation:
Center for Space Microelectronic Technology, Jet Propulsion laboratory California Institute of Technology, Pasadena, CA 91109
Get access

Abstract

Silicon CCDs have limited sensitivity to particles and photons with short penetration depth, due to the surface depletion caused by the inherent positive charge in the native oxide. Because of surface depletion, internally-generated electrons are trapped near the irradiated surface and therefore cannot be transported to the detection circuitry. This deleterious surface potential can be eliminated by low-temperature molecular beam epitaxial (MBE) growth of a delta-doped layer on the Si surface. This effect has been demonstrated through achievement of 100% internal quantum efficiency for UV photons detected with delta-doped CCDs.

In this paper, we will discuss the modification of the band bending near the CCD surface by low-temperature MBE and report the application of delta-doped CCDs to low-energy electron detection. We show that modification of the surface can greatly improve sensitivity to low-energy electrons. Measurements comparing the response of delta-doped CCDs with untreated CCDs were made in the 50 eV-1.5 keV energy range. For electrons with energies below 300 eV, the signal from untreated CCDs was below the detection limit for our apparatus, and data are presented only for the response of delta-doped CCDs at these energies. The effects of multiple electron hole pair (EHP) production and backscattering on the observed signals are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 448: Symposium M – Control of Semiconductor Surfaces and Interfaces , 1996 , 177
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Hoenk, M.E., Grunthaner, P.J., Grunthaner, F.J., Fattahi, M., Tseng, H.-F., and Terhune, R.W., Appl. Phys. Lett,61,(9) 1084 (1992).Google Scholar
2 Nikzad, S., Hoenk, M.E., Grunthaner, P.J., Terhune, R.W., Wizenread, R., Fattahi, M., Tseng, H-.F., and Grunthaner, F.J., Proc. of SPIE, 2217, Surveillance Technologies III , April 4-8, Orlando, Fl. (1994).Google Scholar
3 Luke, K.L., and Cheng, L.-J., , J. Appl. Phys.,.60,589 (1986).Google Scholar
4 Daud, T., Janesick, J.R., Evans, K., and Elliot, T., Opt. Eng., 26(8) 686 (1987).Google Scholar
5 Nikzad, S., Hoenk, M.E., Grunthaner, P.J., Terhune, R.W., and Grunthaner, F.J..,Proc. SPIE, 2198, Astronomical Telescopes & Instrumentation for the 21st Centruy, March 13–18, Kona, Hawaii (1994).Google Scholar
6 Sze, S.M., Physics of Semiconductor Devices, 2nd Ed, Wiley & Sons, New York (1981) p.42.Google Scholar
7 Stearns, D.G., and Wiedwald, J.D., Rev. Sci. Instrum. 60 (6) 1095 (1989).Google Scholar
8 Klein, C.A., J. Appl. Phys. 39 (4) 2029 (1968).Google Scholar
9 Canfield, L.R., Kerner, J., and Korde, R., Appl. Opt. 28 3940 (1989).Google Scholar
10 Drescher, H., Reiner, L., and Seidel, H., Zeitschrift fur Angewandte Physik, 29 (6) 331 (1970).Google Scholar
11 Darlington, E.H., and Cosslett, V.E., J. Phys. D: Appl. Phys.,5 (11) 1969 (1972).Google Scholar
12 Staub, P. F., J. Phys D: Appl. Phys, 27 (7) 1533 (1994).Google Scholar