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Modification of μm Thick Surface Layers Using keV Ion Energies*

Published online by Cambridge University Press:  25 February 2011

L. E. Rehn ,
N. Q. Lam  and
H. Wiedersich
L. E. Rehn
Affiliation:
Materials Science and Technology Division, Argonne National Laboratory, 9700 S. Cass Ave., Argonne, Illinois 60439, U.S.A.
N. Q. Lam
Affiliation:
Materials Science and Technology Division, Argonne National Laboratory, 9700 S. Cass Ave., Argonne, Illinois 60439, U.S.A.
H. Wiedersich
Affiliation:
Materials Science and Technology Division, Argonne National Laboratory, 9700 S. Cass Ave., Argonne, Illinois 60439, U.S.A.
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Abstract

Root-mean-square diffusion distances for both vacancy and interstitial defects in metals can be very large at elevated temperatures, e.g. several μm's in one second at 500°C. Consequently, defects that escape the implanted region at elevated temperature can produce compositional and microstructural changes to depths which are much larger than the ion range. Because of the high defect mobilities, and of the fact that diffusion processes must compete with the rate of surface recession, the effects of defect production (ballistic mixing), radiation-enhanced diffusion and radiation- induced segregation become spatially separated during ion bombardment at elevated temperature. Results of such experimental studies in a Cu-Ni alloy are presented, discussed and compared with predictions of a phenomenological model. Contributions to the subsurface compositional changes from radiation-enhanced diffusion and radiation- induced segregation are clearly identified.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 27: Symposium E – Ion Implantation and Ion Beam Processing of Materials , 1983 , 37
Copyright
Copyright © Materials Research Society 1984

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Footnotes

*

Work supported by the U.S. Department of Energy.

References

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