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Modelling of Gas-Phase and Surface Kinetics in Movpe of GaAs and AlxGal-xAs

Published online by Cambridge University Press:  25 February 2011

T.J. Mountziaris ,
N.K. Ingle  and
S. Kalyanasundaram
T.J. Mountziaris
Affiliation:
Department of Chemical Engineering, State University of New York, Buffalo, NY 14260
N.K. Ingle
Affiliation:
Department of Chemical Engineering, State University of New York, Buffalo, NY 14260
S. Kalyanasundaram
Affiliation:
Department of Chemical Engineering, State University of New York, Buffalo, NY 14260
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Abstract

We present detailed chemical reaction mechanisms that describe the deposition of GaAs films from tertiary-butyl-arsine (TBA) and trimethyl-gallium (TMG) as well as the deposition of AlxGa1-xAs (0≤x≤1) films from trimethyl-aluminum (TMAl), TMG and arsine during metalorganic vapor phase epitaxy (MOVPE). The kinetic models include both gas-phase and surface reactions, whose rates are used to predict production or consumption of the participating species as well as the growth rate of the film. Two-dimensional simulations of flow, heat and mass transfer in horizontal MOVPE reactors have been coupled with the kinetic models to provide a realistic picture of the process. The predicted growth rates at different operating conditions as well as the predicted incorporation ratio, x, of Al in the AlxGal-xAs films are in good agreement with experimental observations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 204: Symposium E – Chemical Perspectives of Microelectronic Materials II , 1990 , 219
Copyright
Copyright © Materials Research Society 1991

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References

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