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Modeling the Carrier Mobility in Nanowire Channel FET

Published online by Cambridge University Press:  01 February 2011

Werner Prost ,
Kai Blekker ,
Quoc-Thai Do ,
Ingo Regolin ,
Sven Müller ,
Daniel Stichtenoth ,
Katharina Wegener ,
Carsten Ronning  and
Franz-Josef Tegude
Werner Prost
Affiliation:
werner.prost@uni-due.de, University Duisburg-Essen, Solid-State Electronics, Lotharstr. 57, Duisburg, 47057, Germany, 49 203 379 4607, 49 203 379 3400
Kai Blekker
Affiliation:
kai.blekker@uni-due.de, University Duisburg-Essen, Lotharstr. 55, Duisburg, 47057, Germany
Quoc-Thai Do
Affiliation:
thai.do@uni-due.de, University Duisburg-Essen, Lotharstr. 55, Duisburg, 47057, Germany
Ingo Regolin
Affiliation:
ingo.regolin@uni-due.de, University Duisburg-Essen, Lotharstr. 55, Duisburg, 47057, Germany
Sven Müller
Affiliation:
Carsten.Ronning@phys.uni-goettingen.de, University of Göttingen, Friedrich-Hund-Platz 1, Göttingen, 37077, Germany
Daniel Stichtenoth
Affiliation:
daniel.stichtenoth@phys.uni-goettingen.de, University of Göttingen, Friedrich-Hund-Platz 1, Göttingen, 37077, Germany
Katharina Wegener
Affiliation:
kwegene@gwdg.de, University of Göttingen, Friedrich-Hund-Platz 1, Göttingen, 37077, Germany
Carsten Ronning
Affiliation:
Carsten.Ronning@phys.uni-goettingen.de, University of Göttingen, Friedrich-Hund-Platz 1, Göttingen, 37077, Germany
Franz-Josef Tegude
Affiliation:
franz.tegude@uni-due.de, University Duisburg-Essen, Lotharstr. 55, Duisburg, 47057, Germany
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Abstract

We report on the extraction of carrier type, and mobility in semiconductor nanowires by adopting experimental nanowire field-effect transistor device data to a long channel MISFET device model. Numerous field-effect transistors were fabricated using n-InAs nanowires of a diameter of 50 nm as a channel. The I-V data of devices were analyzed at low to medium drain current in order to reduce the effect of extrinsic resistances. The gate capacitance is determined by an electro-static field simulation tool. The carrier mobility remains as the only parameter to fit experimental to modeled device data. The electron mobility in n-InAs nanowires is evaluated to µ = 13,000 cm2/Vs while for comparison n-ZnO nanowires exhibit a mobility of 800 cm2/Vs.

Keywords

electronic materialsemiconductingmicroelectronics
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1017 , 2007 , 1017-DD14-06
Copyright
Copyright © Materials Research Society 2007

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