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Modeling of PVT Growth of Bulk SiC Crystals: General Trends and 2” to 4” Reactor Scaling

Published online by Cambridge University Press:  10 February 2011

M.S. Ramm ,
A.V. Kulik ,
I.A. Zhmakin ,
S.Yu. Karpov ,
O.V. Bord ,
S.E. Demina  and
Yu.N. Makarov
M.S. Ramm
Affiliation:
A.F. loffe Physical-Technical Institute, Russian Academy of Sciences, Polytechnicheskaya 26, 194021, St.Petersburg, Russia, ramm@softimpact.fi.ru
A.V. Kulik
Affiliation:
Soft-Impact Ltd., P.O.Box 33, 194156, St.Petersburg, Russia
I.A. Zhmakin
Affiliation:
Soft-Impact Ltd., P.O.Box 33, 194156, St.Petersburg, Russia
S.Yu. Karpov
Affiliation:
Soft-Impact Ltd., P.O.Box 33, 194156, St.Petersburg, Russia
O.V. Bord
Affiliation:
A.F. loffe Physical-Technical Institute, Russian Academy of Sciences, Polytechnicheskaya 26, 194021, St.Petersburg, Russia
S.E. Demina
Affiliation:
Soft-Impact Ltd., P.O.Box 33, 194156, St.Petersburg, Russia
Yu.N. Makarov
Affiliation:
Fluid Mechanics Institute, University of Erlangen-Ntirnberg, Cauerstrasse 4, D-91058 Erlangen, Germany
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Abstract

We report on study of a growth system upscaling from 2” to 4” using numerical modeling. The model applied involves heat and mass transfer computations combined with a self-consistent analysis of deposit formation on the reactor walls. General trends in SiC bulk crystal growth originated from upscaling are discussed in detail.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 616: Symposium I – New Methods, Mechanisms & Models of Vapor Deposition , 2000 , 227
Copyright
Copyright © Materials Research Society 2000

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References

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