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Modeling of Polysilicon Resistors, P-N Junction Diodes and Mosfet's

Published online by Cambridge University Press:  21 February 2011

A. N. Khondker ,
S. S. Ahmed ,
T. Liou  and
D. M. Kim
A. N. Khondker
Affiliation:
Department of Electrical and Computer Engineering, Clarkson College, Potsdam, New York 13676;
S. S. Ahmed
Affiliation:
Department of Electrical Engineering, Rice University, P.O. Box 1892, Houston, Texas 77251
T. Liou
Affiliation:
Department of Electrical and Computer Engineering, Clarkson College, Potsdam, New York 13676;
D. M. Kim
Affiliation:
Department of Electrical Engineering, Rice University, P.O. Box 1892, Houston, Texas 77251
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Abstract

Conductivity in bulk polysilicon is discussed, applicable over a wide range of dopant concentration, temperature, grain size and trap density. The I-V behavior in a lateral poly p-n junction is analytically modeled, incorporating the effects of carrier lifetime operative in crystalline grain and amorphous conducting boundary. In particular, the extremely short carrier lifetime within the grain boundary is shown to provide an ohmic conduction channel in a direction parallel to current flow. This ohmic current can account for the unusually high current levels observed at small applied voltages. Also, the shift of the threshold voltage of MOS devices, as influenced by grain traps near the channel region, is analysed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 33: Symposium D – Comparison of Thin Film Transistor and SOI Technologies , 1984 , 207
Copyright
Copyright © Materials Research Society 1984

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References

REFERENCES

1. Kim, D.M., Khondker, A.N., Shah, R.R., and Crosthwait, D.L., IEEE Electron Device Lett., Vol. EDL-3, pp. 141–143, 1981.10.1109/EDL.1982.25514Google Scholar
2. Kim, D.M., Khondker, A.N., Ahmed, S.S., and Shah, R.R., IEEE Trans. Electron Devices (to be published in April 1984).Google Scholar
3. Khondker, A.N., Kim, D.M., Ahmed, S.S., and Shah, R.R., IEEE Trans. Electron Devies (to be published in April 1984).Google Scholar
4. Seto, J.Y.W., J. Appl. Phys., Vol.46, pp. 5247–5254, 1975.10.1063/1.321593CrossRefGoogle Scholar
5. Lu, N.C.C., Gerzberg, L., Lu, C.Y., and Meindtl, J.D., IEEE Electron Devices Letts, Vol. EDL-2, pp. 95–98, April 1981.Google Scholar
6. Mandhurah, M.M., Saraswat, K.C., Helms, C.R., and Kamins, T.I., J. Appl. Phys., Vol.51, pp. 5755–5763, 1980.10.1063/1.327582CrossRefGoogle Scholar
7. Mahan, J.E., Appl. Phys. Lett., Vol.41(5), pp. 479–481, 1982.10.1063/1.93538Google Scholar
8. Dutoit, M., and Sollberger, F., J. Electro. Chem., 125, p. 1648, 1978.10.1149/1.2131264CrossRefGoogle Scholar
9. Manoliu, J., and Kamins, T.I., Solid State Electron., Vol.15, pp. 1103–1106, 1972.10.1016/0038-1101(72)90169-4Google Scholar
10. Schichijo, H., Malhi, S.D.S., Chatterjee, P.K., Shah, R.R., Douglas, M.A., and Lam, H.W., Technical Digest, IEDM, 1983.Google Scholar
11. Card, B.C., and Hwang, W., IEEE Trans. Electron Devices, ED-27, 4, p. 700, April 1980.10.1109/T-ED.1980.19925CrossRefGoogle Scholar
12. Card, B.C., and Yang, E.S., IEEE Trans. Electron Devices, ED-24, 4, p. 397, April 1977.10.1109/T-ED.1977.18747CrossRefGoogle Scholar
13. Grove, A.S., “Physics and Technology of Semiconductor Devices, John Wiley & Sons, NY, 1967.Google Scholar
14. Shockley, N., Bell Sys. Tech. J., Vol.28, pp. 435–489, July 1949.10.1002/j.1538-7305.1949.tb03645.xCrossRefGoogle Scholar
15. Kamins, T.I., and Marcoux, , IEEE Electron Devices Letts., Vol. EDL-l, No. 8, August 1980.Google Scholar