Hostname: page-component-5c6d5d7d68-wpx84 Total loading time: 0 Render date: 2024-08-08T04:52:37.234Z Has data issue: false hasContentIssue false
  • English
  • Français

Modeling Dopant Diffusion in Gallium Arsenide

Published online by Cambridge University Press:  22 February 2011

M. D. Deal ,
C. J. Hu ,
C. C. Lee  and
H. G. Robinson
M. D. Deal
Affiliation:
Department of Electrical Engineering, Stanford University, Stanford, CA 94305
C. J. Hu
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305
C. C. Lee
Affiliation:
Department of Materials Science and Engineering, U. of Florida, Gainesville, FL 32611
H. G. Robinson
Affiliation:
Department of Materials Science and Engineering, U. of Florida, Gainesville, FL 32611
Get access

Abstract

We have been developing models for our process simulators, SUPREM 3.5 and SUPREM-IV, for processes used in the fabrication of GaAs devices. Our initial experiments led to relatively simple models for diffusion of common dopants in GaAs, usually dependent only on temperature and the local dopant or carrier concentration. These models were incorporated into our first GaAs simulator, SUPREM 3.5. While these simple models were adequate for some process conditions, there are many cases where anomalous diffusion occurs and these models break down. The generally accepted diffusion mechanisms for n- and p-type dopants in GaAs have been shown to be the same as, or indistinguishable from, the models used for diffusion in silicon, and are therefore compatible with the diffusion algorithms used in SUPREM-IV. These algorithms include the effects of point defects. GaAs and eight of its dopants have recently been incorporated into SUPREM-IV and we have modeled, or are attempting to model, many of the anomalous diffusion phenomena using this simulator. These phenomena include uphill diffusion of implanted dopants, time dependent diffusion, implant energy dependent diffusion, and abnormal diffusion of grown-in dopants in MBE and MOCVD material.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 300: Symposium D1 – III-V Electronic and Photonic Device Fabrication and Performance , 1993 , 365
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Deal, M.D., Hansen, S.E., and Sigmon, T.W., IEEE Trans. CAD, 9, 939 (1989).Google Scholar
2. Ho, C.P., Plummer, J.D., Hansen, S., and Dutton, R., IEEE Trans. Dev., ED–30, 1438 (1983).Google Scholar
3. Antell, G.R., Sol. State Elec., 8, 943 (1965).Google Scholar
4. Stoneham, E.B., Peterson, G.A., and Gladstone, J.M., J. Elect. Mat., 9, 371 (1980).Google Scholar
5. Allen, E.L., Murray, J.J., Deal, M.D., Plummer, J.D., Jones, K.S., and Rubert, W.S., J. Electro. Chem. Soc., 138, 3440 (1991).Google Scholar
6. Murray, J.J., Deal, M.D., Allen, E.A., Stevenson, D.A., and Nozaki, S., J. Electrochem. Soc., 139, 2037 (1992).Google Scholar
7. Fane, R.W. and Goss, A.J., Sol. State Elect., 6, 383 (1963).Google Scholar
8. Murray, J.J., Ph.D. Thesis, Stanford University (1992).Google Scholar
9. Tan, T.Y. and Gösele, U., Mat. Sci. and Engr., B1, 47 (1988).Google Scholar
10. Houston, P.A., Shepherd, F.R., SpringThorpe, A.J., Mandeville, P., and Margittai, A., Appl. Phys. Lett, 52, 1219 (1988).Google Scholar
11. Deal, M.D., Robinson, H.G., and Hansen, S.E., Proc. of 1988 IEEE GaAs I.C. Symp., 10, 247 (1988).Google Scholar
12. Deal, M.D. and Robinson, H.G., Appl. Phys. Lett., 55, 1990 (1989).Google Scholar
13. Robinson, H.G., Deal, M.D., and Stevenson, D.A., Appl. Phys. Lett. 58, 2800 (1991).Google Scholar
14. McLevige, W.V., Vaidyanathan, K., and Streetman, B.G., Appl. Phys. Lett., 33, 127 (1978).Google Scholar
15. Nordell, N., Ojala, P., Berlo, W.H. van, Landgren, G., and Linnarsson, M.K., J. Appl. Phys., 67, 778 (1990).Google Scholar
16. Deal, M.D. and Robinson, H.G., Appl. Phys. Lett., 55, 996 (1989).Google Scholar
17. Law, M., Ph.D. Thesis, Stanford University (1988).Google Scholar
18. Robinson, H.G., Deal, M.D., Griffin, P.B., Amaratunga, G., Stevenson, D.A., and Plummer, J.D., J. Appl. Phys., 71, 2615, (1992).Google Scholar
19. Haynes, T.E. and Holland, O.W., Appl. Phys. Lett., 59, 452 (1991).Google Scholar
20. Murray, J.J., Ph.D. Thesis, Stanford University, 1992.Google Scholar
21. Yu, S., Tan, T.Y., and Gdsele, U., J. Appl. Phys., 69, 3547 (1991).Google Scholar