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MOCVD Growth of GaAs on Si with Low Temperature Preheating Process

Published online by Cambridge University Press:  25 February 2011

N. Takagi ,
T. Eshita ,
S. Miyagaki ,
M. Kimura  and
K. Takasaki
N. Takagi
Affiliation:
Fujitsu Limited, Process Development Division, Kawasaki
T. Eshita
Affiliation:
Fujitsu Limited, Process Development Division, Kawasaki
S. Miyagaki
Affiliation:
Fujitsu Limited, Process Development Division, Kawasaki
M. Kimura
Affiliation:
Fujitsu Limited, Process Development Division, Kawasaki
K. Takasaki
Affiliation:
Fujitsu Limited, Process Development Division, Kawasaki
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Abstract

A low temperature preheating process is developed for metalorganic chemical vapor deposition (MOCVD) growth of GaAs on wet chemical pretreated Si substrates. NH4 OH/H2 O2 is found to be most effective in decreasing the preheating temperature among the chemicals we tried: NH4 OH/H2 O2, H2SO4 /H2O2, or hot HNO3. By using NH4OH/H2 O2, the preheating temperature is reduced from 1000°C to 875°C. X-ray diffraction measurements and surface observations with an atomic force microscope (AFM) show that the GaAs film quality obtained with the 875 °C preheating process is better than that obtained with 1000°C preheating.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 259: Symposium B – Chemical Surface Preparation, Passivation and Cleaning for Semiconductor Growth and Processing , 1992 , 305
Copyright
Copyright © Materials Research Society 1992

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References

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