Hostname: page-component-848d4c4894-xfwgj Total loading time: 0 Render date: 2024-06-17T07:42:37.448Z Has data issue: false hasContentIssue false
  • English
  • Français

Misfit Dislocation Nucleation Sites and Metastability Enhancement of Selective Si1−xGex/Si Grown by Rapid Thermal Chemical Vapor Deposition

Published online by Cambridge University Press:  25 February 2011

C. W. Liu ,
J. C. Sturm ,
P. V. Schwartz  and
E. A. Fitzgerald
C. W. Liu
Affiliation:
Princeton University, Department of Electrical Engineering, Princeton, NJ 08544
J. C. Sturm
Affiliation:
Princeton University, Department of Electrical Engineering, Princeton, NJ 08544
P. V. Schwartz
Affiliation:
Princeton University, Department of Electrical Engineering, Princeton, NJ 08544
E. A. Fitzgerald
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
Get access

Abstract

A quantitative model of the effect of the selective growth on dislocation density has been developed and compared to experiments. It is concluded that the dominant dislocation nucleation source in the selective areas occurs at the specific heterogeneous sites at edges of the selective areas. This edge nucleation can be controlled by adjusting the orientation of the sidewalls.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 238: Symposium Cb – Structure and Properties of Interfaces in Materials , 1991 , 85
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Hirayama, H., Hiroi, M., Koyama, K., and Tatsumi, T., Appl. Phys. Lett. 56, 2645 (1990).Google Scholar
2. Noble, D. B., Hoyt, J. L., King, C.A., Gibbons, J.F., Kamins, T.I., and Scott, M.P., Appl. Phys. Lett. 56, 51 (1990).CrossRefGoogle Scholar
3. Fitzgerald, E. A., Xie, Y.-H., Brasen, D., Green, M.L., Michel, J., Freeland, P. E., and Weir, B.E., J. Electronic Material, 19, 949 (1990).CrossRefGoogle Scholar
4. Sturm, J.C., Schwartz, P.V., Prinz, E. J., and Manoharan, H., J. Vac. Sci. Tech. B9, 2011 (1991).Google Scholar
5. Schimmel, D.G., J. Electrochem. Soc., 123, 740 (1976).CrossRefGoogle Scholar
6. Tuppen, C.G., Gibbing, C.J., and Hockley, M., J. Cryst. Growth 94, 392 (1989).Google Scholar
7. Houghton, D.C., Perovic, D.D., Baribeau, J.-M., and Weatherly, G.C., J. Appl. Phys. 67, 1850 (1990).Google Scholar
8. Fitzgerald, E.A., Watson, G.P., Proano, R.E., Ast, D.G., Kirchner, P.D., Pettit, G.D., and Woodall, J.M., J. Appl. Phys. 65, 2220 (1989)Google Scholar
9. Drowley, C.I., Reid, G.A., and Hull, R., Appl. Phys. Lett. 52, 546 (1988).Google Scholar