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Minority Carrier Injection and Series Resistance Effects in Hydrogenated Amorphous Silicon Schottky Barrier Diodes

Published online by Cambridge University Press:  28 February 2011

Jerzy Kanicki
Jerzy Kanicki*
Affiliation:
IBM Thomas J. Watson Research Center P.O.Box 218, Yorktown Heights, New York 10598, U.S.A.
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Abstract

The minority-carrier injection and series resistance effects on the electrical properties of a-Si:H Schottky barrier diodes are described. The conductivity modulation was observed, for the first time, in metal/HOMOCVD a-Si:H contacts. Its effect on capacitance-voltage characteristics are discussed. The minority-carrier injection ratio is estimated from current-voltage characteristics as a function of total forward current for different metals. It is shown that these effects cannot be neglected in the interpretation of the AC and DC measurements. The caution, therefore, must be taken when using a-Si:H diodes structures to obtain the fundamental physical parameters characterizing either the interface or bulk properties of amorphous semiconductors.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 49: Symposium F – Materials Issues in Applications of Amorphous Silicon Technology , 1985 , 101
Copyright
Copyright © Materials Research Society 1985

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