Hostname: page-component-7479d7b7d-8zxtt Total loading time: 0 Render date: 2024-07-12T01:35:42.701Z Has data issue: false hasContentIssue false
  • English
  • Français

Mid Infrared Photoconductivity Spectra of Donor Impurities in Hexagonal Silicon Carbide

Published online by Cambridge University Press:  10 February 2011

R. J. Linville ,
G. J. Brown ,
W. C. Mitchel ,
A. Saxler  and
R. Perrin
R. J. Linville
Affiliation:
Air Force Research Laboratory, Materials & Manufacturing Directorate (AFRL/MLPO) 3005 P ST, Wright-Patterson AFB, OH 4533–7707
G. J. Brown
Affiliation:
Air Force Research Laboratory, Materials & Manufacturing Directorate (AFRL/MLPO) 3005 P ST, Wright-Patterson AFB, OH 4533–7707
W. C. Mitchel
Affiliation:
Air Force Research Laboratory, Materials & Manufacturing Directorate (AFRL/MLPO) 3005 P ST, Wright-Patterson AFB, OH 4533–7707
A. Saxler
Affiliation:
Air Force Research Laboratory, Materials & Manufacturing Directorate (AFRL/MLPO) 3005 P ST, Wright-Patterson AFB, OH 4533–7707
R. Perrin
Affiliation:
Air Force Research Laboratory, Materials & Manufacturing Directorate (AFRL/MLPO) 3005 P ST, Wright-Patterson AFB, OH 4533–7707
Get access

Abstract

Mid-infrared photoconductivity (PC) is a useful technique for identifying and investigating donor and acceptor centers in many semiconductors. This is especially true when the PC results are combined with other measurements such as Hall Effect and DLTS. We report on the first Fourier Transform Infrared (FTIR) photoconductivity spectra for n-type 6H and 4H-SiC. The samples studied had temperature dependent Hall activation energies around 45 meV and 85 meV in the 4H samples, and a single activation energy of 106 meV in the 6H. For the 4H samples, the PC spectra showed an increase in photoresponse between 40 and 47 meV, with another sharp increase at 120 meV. In the 6H-SiC, the photoresponse also had a rapid increase at 120 meV, and at 77 meV in one sample. The photoresponse spectra of the n-type 4H and 6H-SiC samples were distinctly different in the mid-infrared.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 572: Symposium Y – Wide-Bandgap Semiconductors for High-Power, High Frequency… , 1999 , 281
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Choyke, W. J. and Pensl, G., Physica B47, 212(1991).Google Scholar
2. Woodbury, H. H. and Ludwig, G. W., Phys. Rev. 124, 1083(1961).10.1103/PhysRev.124.1083Google Scholar
3. Mitchel, W. C., Brown, G. J., Rea, L. S. and Smith, S., Appl, J.. Phys. 71, 246(1992).Google Scholar
4. Rome, J. J., Spry, R. J., Chandler, T. C., Brown, G. J., Harris, R. J. and Covington, B. C., Phys. Rev. B25, 3615–3618 (1982).10.1103/PhysRevB.25.3615Google Scholar
5. Evwaraye, A. O., Smith, S. R. and Mitchel, W. C., Mat. Res. Soc. Symp. Proc. On Defect and Impurity Engineered Semiconductors 11, 510, 187 (1998).10.1557/PROC-510-187Google Scholar