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Microwave Dielectric Tuning and Losses in Epitaxial Lift-Off Thin Films of Strontium Titanate

Published online by Cambridge University Press:  10 February 2011

Charles T. Rogers ,
Mark J. Dalberth  and
John C. Price
Charles T. Rogers
Affiliation:
Department of Physics, University of Colorado, Boulder, CO 80309-0390
Mark J. Dalberth
Affiliation:
Department of Physics, University of Colorado, Boulder, CO 80309-0390
John C. Price
Affiliation:
Department of Physics, University of Colorado, Boulder, CO 80309-0390
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Abstract

We report on the complex dielectric response function for SrTiO3 (STO) thin films that have been removed from the original growth substrate via an epitaxial lift-off process. We measured the dielectric response as a function of frequency (10 kHz to above 2 GHz), as a function of temperature (4 K to 300 K), and as a function of applied electric field (between +/− 10 V/µm). The dielectric properties are well described by a model based on a dilute set of thermally activated two-level dipoles in a matrix of bulk STO. Activation energies for the dipoles are found to cluster around two central values near 50 meV and 100 meV. Attempt frequencies are generally around 10 THz. Assuming that the dipole moment of a typical two-level system is equal to that of a unit cell of polarized bulk STO, we find that a volume fraction of roughly 4% of a typical film is involved in the dipole response.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 603: Symposium KK – Materials Issues for Tunable RF & Microwave Devices , 1999 , 265
Copyright
Copyright © Materials Research Society 2000

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