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Microwave Annealing of Ion Implanted 6H-SiC

Published online by Cambridge University Press:  10 February 2011

J. A. Gardner ,
M. V. Rao ,
Y. L. Tian ,
O. W. Holland ,
G. Kelner ,
J. A. Freitas Jr  and
I. AIMAD
J. A. Gardner
Affiliation:
ECE Department, George Mason University, Fairfax, Virginia 22030
M. V. Rao
Affiliation:
ECE Department, George Mason University, Fairfax, Virginia 22030
Y. L. Tian
Affiliation:
ECE Department, George Mason University, Fairfax, Virginia 22030
O. W. Holland
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, Tennessee, 37831
G. Kelner
Affiliation:
Naval Research Laboratory, Washington, D.C. 20375
J. A. Freitas Jr
Affiliation:
Naval Research Laboratory, Washington, D.C. 20375
I. AIMAD
Affiliation:
FM Technologies Inc., Fairfax, Virginia, 22032
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Abstract

Microwave rapid thermal annealing has been utilized to remove the lattice damage caused by nitrogen (N) ion-implantation as well as to activate the dopant in 6H-SiC. Samples were annealed at temperatures as high as 1400 °C, for 10 min. Van der Pauw Hall measurements indicate an implant activation of 36%, which is similar to the value obtained for the conventional furnace annealing at 1600 °C. Good lattice quality restoration was observed in the Rutherford backscattering and photoluminescence spectra.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 430: Symposium O – Microwave Processing of Materials V , 1996 , 641
Copyright
Copyright © Materials Research Society 1996

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