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Microstructure Evolution of Amorphous Si1-xGex Thin Films

Published online by Cambridge University Press:  10 February 2011

H. Y. Tong ,
Q. Jiang ,
D. Hsu ,
T. J. King  and
F. G. Shi
H. Y. Tong
Affiliation:
School of Engineering, University of California, Irvine, CA 92697–2575, USA
Q. Jiang
Affiliation:
School of Engineering, University of California, Irvine, CA 92697–2575, USA
D. Hsu
Affiliation:
School of Engineering, University of California, Irvine, CA 92697–2575, USA
T. J. King
Affiliation:
Department of Electrical Engineering & Computer Science, University of California Berkeley, CA 94720–1770, USA
F. G. Shi
Affiliation:
School of Engineering, University of California, Irvine, CA 92697–2575, USA
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Abstract

The composition dependence of the nucleation free energy barrier W* in amorphous Si1-xGex thin films is investigated. Within the composition range of x = 0.25 ∼ 0.52, the nucleation free energy barrier exhibits a maximum, which is in a good agreement with our theoretical analysis. The results are significant for processing polycrystalline SiGe thin films with desirable microstructures for thin film transistor applications. In addition, the incubation time of crystallization of amorphous Si1-xGex (x=0.5) thin films is investigated as a function of temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 472: Symposium I – Polycrystalline Thin Films - Structure, Texture, Properties..III , 1997 , 397
Copyright
Copyright © Materials Research Society 1997

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References

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