Hostname: page-component-77c89778f8-vsgnj Total loading time: 0 Render date: 2024-07-18T13:51:06.260Z Has data issue: false hasContentIssue false
  • English
  • Français

Microstructure, Damage and Resistance during Electromigration Life-Testing of Al-Cu Interconnects

Published online by Cambridge University Press:  21 February 2011

W.C. Shih ,
A.L. Greer ,
Y.Z. Xu  and
B.K. Jones
W.C. Shih
Affiliation:
University of Cambridge, Department of Materials Science and Metallurgy, Pembroke Street, Cambridge CB2 3QZ, United Kingdom
A.L. Greer
Affiliation:
University of Cambridge, Department of Materials Science and Metallurgy, Pembroke Street, Cambridge CB2 3QZ, United Kingdom
Y.Z. Xu
Affiliation:
Lancaster University, School of Physics and Materials, Lancaster LA1 4YB, United Kingdom
B.K. Jones
Affiliation:
Lancaster University, School of Physics and Materials, Lancaster LA1 4YB, United Kingdom
Get access

Abstract

Unpassivated 1.4 mm long lines of Al-4wt.%Cu metallization have been successively imaged (by scanning electron microscopy) and electromigration stressed until failure. The resistance of lines, evolution of line microstructure and the development of electromigration damage are thus discontinuously recorded through the accelerated life-testing (260°C, 2 × 1010 A m-2). Correlations are made among microstructure evolution, electromigration damage development and line resistance. The probable mechanisms of damage development are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 309: Symposium M2 – Materials Reliability in Microelectronics III , 1993 , 369
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Shih, W.C., Denton, T.C. and Greer, A.L., in Materials Reliability in Microelectronics II. edited by Thompson, C.V. and Lloyd, J.R., Mater. Res. Soc. Proc. 265, (1992) pp. 101–106.Google Scholar
2. Greer, A.L. and Shih, W.C., in Materials Reliability in Microelectronics II. edited by Thompson, C. V. and Lloyd, J.R., Mater. Res. Soc. Proc. 265, (1992) pp. 83–94.Google Scholar
3. Jones, B.K., Xu, Y.Z. and Emonts, P.G.A., Proc. 3rd Euro. Symp. on Reliability of Electron Devices. Failure Physics and Analysis, (1992) pp. 363–366.Google Scholar
4. Jones, B.K., Xu, Y.Z., Microelectronics and Reliability, 1993 (to be published).Google Scholar
5. Shih, W.C. and Greer, A.L., Proc. 3rd Euro. Symp. on Reliability of Electron Devices. Failure Physics and Analysis, (1992) pp. 347–350.Google Scholar
6. Sanchez, J.E. Jr., McKnelly, L.T. and Morris, J.W. Jr., J. Electronic Materials, 19 (11), 1213–1220 (1990).Google Scholar
7. Vavra, I. and Luby, S., Czech. J. Phys. B 30, 179–184 (1980).Google Scholar
8. Shingubara, S., Kaneko, H. and Saitoh, M., J. Appl. Phys. 69, 207–212 (1991).CrossRefGoogle Scholar
9. Shingubara, S., Nakasaki, Y. and Kaneko, H., Appl. Phys. Lett. 58, 42–44 (1991).CrossRefGoogle Scholar