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Microstructure and the Urbach Edge in Glow Discharge Deposited a-SiC:H

Published online by Cambridge University Press:  26 February 2011

A. H. Mahan ,
A. Mascarenhas ,
D. L. Williamson  and
R. S. Crandall
A. H. Mahan
Affiliation:
Solar Energy Research Institute, Golden, CO 80401
A. Mascarenhas
Affiliation:
Solar Energy Research Institute, Golden, CO 80401
D. L. Williamson
Affiliation:
Colorado School of Mines, Golden, CO 80401
R. S. Crandall
Affiliation:
Solar Energy Research Institute, Golden, CO 80401
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Abstract

Photothermal deflection spectroscopy, infrared, and Raman measurements are presented for a series of a-SiC:H samples containing different amounts of microstructure. The Urbach edge is seen to widen systematically as the film microstructure increases, but the width of the Raman transverse optical mode remains unchanged. We argue that the increase in Urbach edge width with increasing C content is due entirely to the increase in microstructure. In addition, from the invariance of the Raman measurements with increasing microstructure and the assumed sensitivity of the Raman technique to surface states on the interior surfaces of these microstructural features, we are able to place lower limits on the size of these features. Such sizes are corroborated by preliminary small angle xray scattering measurements on identically prepared samples.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 118: Symposium E – Amorphous Silicon Technology , 1988 , 641
Copyright
Copyright © Materials Research Society 1988

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