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Microstructure and Properties of CoSi2 Thin Films on (100) Silicon by Laser Physical Vapor Deposition

Published online by Cambridge University Press:  01 January 1992

P. Tiwari ,
R. Chowdhury  and
J. Narayan
P. Tiwari
Affiliation:
Department of Materials Science and Engineering North Carolina State University, Raleigh NC 27695–7916
R. Chowdhury
Affiliation:
Department of Materials Science and Engineering North Carolina State University, Raleigh NC 27695–7916
J. Narayan
Affiliation:
Department of Materials Science and Engineering North Carolina State University, Raleigh NC 27695–7916
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Abstract

Laser physical vapor deposition (LPVD) has been used to deposit thin CoSi2 films on (001)silicon at different substrate temperatures ranging from room temperature to 600°C. Particulate-free silicide thin films were characterized by X-ray diffraction, Rutherford backscattering, and high resolution transmission electron microscopy. We have found that films deposited at 200°C and below are amorphous; 400°C deposited films are polycrystalline whereas films deposited at 600°C are of epitaxial nature. The Effect of subsequent annealing on resistivity of room-temperature deposited thin films has been investigated. The resistivity value decreases to less than 15 μΩcm after annealing making these films suitable for microelectronics applications. The correlation between microstructure and properties of these films are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 285: Symposium I – Laser Ablation in Materials Processing–Fundamentals and Applications , 1992 , 533
Copyright
Copyright © Materials Research Society 1993

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References

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