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Microstructure and Kinetics of the Interface Reaction Between Titanium Thin Films and (112) Sapphire Substrates

Published online by Cambridge University Press:  21 February 2011

J.H. Selverian ,
F.S. Ohuchi  and
M.R. Notis
J.H. Selverian
Affiliation:
GTE Laboratories Inc., Materials Science Laboratory, Waltham, MA 02254
F.S. Ohuchi
Affiliation:
E.I. DuPont de Nemours, Central Research and Development, Experimental Station, Wilmington, DE 19898
M.R. Notis
Affiliation:
Department of Materials Science and Engineering, Lehigh University, Bethlehem, PA 18015
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Abstract

We studied the reactivity of titanium with the R-plane (112) surface of sapphire by transmission electron microscopy (TEM), x-ray diffraction (XRD), and Rutherford backscattering (RBS) techniques. Cross-section TEM specimens were prepared from 200–400 nm thick titanium films deposited on sapphire at 25, 525, 554, 562, 580, 630, and 663°C to observe the interfacial region. In samples deposited at 25°C, without further annealing, no reaction zone could be seen in the TEM. In all other samples titanium reduced the sapphire to form Ti0 6 7[O0 3 3] and Ti3Al[O], Ti and Ti3Al with oxygen in solid solution. An activation energy of 24.7 ± 6 kcal/deg-mole was determined for the growth of the Ti3Al[O] layer. Layer thickness measurements from the TEM and RBS studies were within 10–20% of one another.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 167: Symposium K – Advanced Electronic Packaging Materials , 1989 , 335
Copyright
Copyright © Materials Research Society 1990

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