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Microstructure and IR Range Optical Properties of Pure DLC and DLC Containing Dopants Prepared by Pulsed Laser Deposition

Published online by Cambridge University Press:  15 February 2011

Q. Wei ,
A.K. Sharma ,
R.J. Narayan ,
N.M. Ravindra ,
S. Oktyabrsky ,
J. Sankar ,
J.F. Muth ,
R.M. Kolbas  and
J. Narayan
Q. Wei
Affiliation:
NSF Center for Advanced Materials and Smart Structures, Dept. of Materials and Engineering, North Carolina State University, Raleigh, NC 27695-7916
A.K. Sharma
Affiliation:
NSF Center for Advanced Materials and Smart Structures, Dept. of Materials and Engineering, North Carolina State University, Raleigh, NC 27695-7916
R.J. Narayan
Affiliation:
NSF Center for Advanced Materials and Smart Structures, Dept. of Materials and Engineering, North Carolina State University, Raleigh, NC 27695-7916
N.M. Ravindra
Affiliation:
Dept. of Physics, New Jersey Inst. of Tech., Newark, NJ 07102-1982
S. Oktyabrsky
Affiliation:
NSF Center for Advanced Materials and Smart Structures, Dept. of Materials and Engineering, North Carolina State University, Raleigh, NC 27695-7916
J. Sankar
Affiliation:
NSF Center for Advanced Materials and Smart Structures, Dept. of Materials and Engineering, North Carolina State University, Raleigh, NC 27695-7916
J.F. Muth
Affiliation:
Dept. of Electrical Engineering and Computer Science, North Carolina State University, Raleigh, NC
R.M. Kolbas
Affiliation:
Dept. of Electrical Engineering and Computer Science, North Carolina State University, Raleigh, NC
J. Narayan
Affiliation:
NSF Center for Advanced Materials and Smart Structures, Dept. of Materials and Engineering, North Carolina State University, Raleigh, NC 27695-7916
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Abstract

We have investigated the microstructure and the IR range optical properties(emittance, transmittance and reflectance) of diamond-like carbon (DLC) films with the incorporation of dopants. The DLC films were deposited by pulsed laser deposition with a novel target configuration allowing incorporation of dopants, such as silicon, titanium and copper, into the films. Raman spectroscopy, radial distribution function (RDF) and coordination defect analysis of the electron diffraction pattern of the films showed typical features of DLC with a structure dictated by sp3 bonded carbon, indicating that the overall DLC characteristics did not change upon doping. The IR range optical measurements showed that in addition to the general band-toband transitions, free carriers and phonon contributions, localized states also contribute to the emissivity in DLC and they smooth out the sharp features of the emissivity spectra. The effect of dopants is to enhance the contribution from the free carriers and localized states. The results were discussed on the basis of the effect of dopants on the electronic structure of DLC films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 526: Symposium Y – Advances in Laser Ablation of Materials , 1998 , 331
Copyright
Copyright © Materials Research Society 1998

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References

1. Robertson, J., Prog. Solid State Chem. 21, 199(1991).Google Scholar
2. Milne, W. I., J. Non-cryst. Solids 198–200, 605(1996).Google Scholar
3. Wei, Q., Narayan, R. J., Sharma, A. K., Sankar, J. and Narayan, J., in Covalently Bonded Disordered Thin-Film Materials, eds. By Siegal, M., et al. , (Mater. Res. Soc. Proc. 498, PA, 1998).Google Scholar
4. Wei, Q., Narayan, J., Narayan, R. J., Sankar, J. and Sharma, A. K., Mat. Sci. & Eng.(B), 1998, in press.Google Scholar
5. Ebihara, K., Ikegami, T., Matsumoto, T., Nishimoto, H., Maeda, S. and Harada, K., J. Appl. Phys. 66, 4996(1989).Google Scholar
6. Joshi, A., Gangal, S. A. and Kulkarni, S. K., J. Appl. Phys. 64, 6668(1988).Google Scholar
7. Ravindra, N. M., Abedrabbo, S., Chen, W., Tong, F. M., Nanda, A. K. and Speranza, A. C., IEEE Trans. Semicond. Manufact. 11, 30(1998).Google Scholar
8. Tamor, M. A. and Vassell, W. C., J. Appl. Phys. 76, 3823(1994).Google Scholar
9. Cockayne, D. J. H. and McKenzie, D. R., Acta Cryst. A44, 870(1988).Google Scholar
10. Gaskell, P. H., Saeed, A., Chiux, P. and McKenzie, D. R., Phys. Rev. Lett. 67, 1286(1991).Google Scholar
11. Li, F. and Lannin, J. S., Phys. Rev. Lett. 65, 1905(1990).Google Scholar
12. Kakinoki, J., Katada, K., Hanawa, T. and Ino, T., Acta Cryst. 13, 171(1960).Google Scholar
13. Myers, A. F., Ding, M. Q., Camphausen, S. M., Choi, W. B., Cuomo, J. J. and Hren, J. J., the same as in [3].Google Scholar
14. Sato, T., Jpn. J. Appl. Phys. 6, 339(1967).Google Scholar
15. Krishnaswamy, J., Rengan, A., Narayan, J., Vedam, K. and McHaurge, C. J., Appl. Phys. Lett. 54, 2455(1989).Google Scholar
16. Pappas, D. L., Saenger, K. L., Bruley, J., Kratow, W., Cuomo, J. J., Gu, T. and Collins, R., J. Appl. Phys. 71, 5675(1992).Google Scholar
17. Mott, N. F. and Davis, E. A., Electronic Processes in Non-crystalline Materials, 2nd ed., Clarendon Press, Oxford, 1979.Google Scholar
18. Milnes, A. G., Deep Impurities in Semiconductors, John Wiley & Sons, 1973.Google Scholar