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The Microstructure and Chemistry of the Reaction between Ti and α-Al2O3

Published online by Cambridge University Press:  21 February 2011

J. H. Selverian ,
M. Bortz ,
F. S. Ohuchil  and
M. R. Notis
J. H. Selverian
Affiliation:
Lehigh University, Department of Materials Science and Engineering, Bethlehem, PA 18015
M. Bortz
Affiliation:
E.I. du Pont de Nemours and Co., Central Research and Development Department, Experimental Station, Wilmington, DE 19898
F. S. Ohuchil
Affiliation:
E.I. du Pont de Nemours and Co., Central Research and Development Department, Experimental Station, Wilmington, DE 19898
M. R. Notis
Affiliation:
Lehigh University, Department of Materials Science and Engineering, Bethlehem, PA 18015
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Abstract

The Ti/Al2O3 system is being considered for advanced aerospace applications and is important in microelectronics where Ti is used for metallization on Al2O3 substrates. We have studied the intrinsic reactivity of Ti with the R-plane (1012) surface of α-Al2O3 by x-ray photoemission spectroscopy (XPS) and transmission electron microscopy (TEM) techniques. XPS results indicate that a for deposition of several monolayers of Ti at 25 °C, the Ti reduces the Al2O3 surface to produce Ti-O bonds. At 1000 °C the Ti reduces the Al2O3 to produce Ti-O and Ti-Al bonds. Cross-section TEM specimens were prepared from 200 nm thick Ti films deposited on Al2O3 at 25 and 800 °C to observe the interface region. In samples deposited at 25 and 800 °C, without further annealing, no reaction zone could be seen in the TEM. Ordered Ti3Al (78 ± 5 Ti, 16 ± 3 Al and 6 ± 3 0 wt pct) was observed in a sample deposited at 25 °C and annealed at 800 °C for 2 hours.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 108 , 1987 , 107
Copyright
Copyright © Materials Research Society 1988

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References

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