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Microstructural Evolution of Epitaxial MgAl2O4 Thin Films Derived From Metal Nitrates and From Metal Alkoxides

Published online by Cambridge University Press:  15 February 2011

Man Faing  and
Michael J. Cima
Man Faing
Affiliation:
Ceramics Processing Research Laboratory, Massachusetts Institute of Technology, Cambridge, MA.
Michael J. Cima
Affiliation:
Ceramics Processing Research Laboratory, Massachusetts Institute of Technology, Cambridge, MA.
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Abstract

Magnesium aluminate (MgAl2O4) is a potential dielectric material in Ba2YCu3O7−x (BYC) devices. In the present study, epitaxial MgAl2O4 films were deposited on (100) SrTiO3 single crystal substrates by pyrolysis of chemical precursors. Two precursors were used: one was a mixed nitrate precursor, and the other was MgAl2(OC3H7)8. Crystallization of MgAl2O4 on lattice-Matched substrates is observed at 700°C. The average surface roughness of these MgAl2O4 films is about 6Å. These chemically-derived MgAl2O4 films have demonstrated the potential for planarization by metalorganic deposition. The relationship between the processing parameters and the surface morphology of these MgAl2O4 films will be discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 317: Symposium B – Mechanisms of Thin Film Evolution , 1993 , 577
Copyright
Copyright © Materials Research Society 1994

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References

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