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Microstructural Evolution of Co2GaAs Thin Film on GaAs Substrate

Published online by Cambridge University Press:  21 February 2011

D.W. Shin ,
C.G. Park ,
J.S. Kwak  and
H.K. Baik
D.W. Shin
Affiliation:
Department of Materials Science and Engineering, POSTECH, Pohang 790-600, Korea
C.G. Park
Affiliation:
Department of Materials Science and Engineering, POSTECH, Pohang 790-600, Korea
J.S. Kwak
Affiliation:
Department of Metallurgical Engineering, Yonsei University, Seoul 120-749, Korea
H.K. Baik
Affiliation:
Department of Metallurgical Engineering, Yonsei University, Seoul 120-749, Korea
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Abstract

Interfacial reactions and epitaxial growth of the microstructure between cobalt thin film and (100)-oriented GaAs substrate have been studied, using X-ray diffraction, transmission electron microscopy and EDS analysis. Cobalt thin films were deposited by e-beam evaporation, and were subsequently annealed at 400 °C.

The reaction layer evolved due to the annealing was identified as the ternary phase, Co2GaAs, that was grown epitaxially on the substrate. The new orientation relationship between Co2GaAs and GaAs substrate was found as <110>Co2GaAs // <100>GaAs and {001}Co2GaAs // {011}GaAs. These results can be well explained upon matching the unit cells of Co2GaAs and GaAs. Upon the annealing at 600°C, the Co2GaAs phase is usually decomposed to stable binary phases, CoGa and CoAs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 399: Symposium D – Evolution of Epitaxial Structure and Morphology , 1995 , 159
Copyright
Copyright © Materials Research Society 1996

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References

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