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A Microstructural Analysis of Orientation Variation in Epitaxial AlN on Si, Its Probable Origin, and Effect on Subsequent GaN Growth

Published online by Cambridge University Press:  10 February 2011

R. Beye ,
T. George ,
J. W. Yang  and
M. A. Khan
R. Beye
Affiliation:
Center for Space Microelectronics Technology, Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA 91109
T. George
Affiliation:
Center for Space Microelectronics Technology, Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA 91109
J. W. Yang
Affiliation:
APA Optics Inc., 2950 N.E. 84th Lane, Blaine, MN 55434
M. A. Khan
Affiliation:
APA Optics Inc., 2950 N.E. 84th Lane, Blaine, MN 55434
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Abstract

A structural examination of aluminum nitride growth on [111 ] silicon was carried out using transmission electron microscopy. Electron diffraction indicates that the basal planes of the wurtzitic overlayer mimic the orientation of the close-packed planes of the substrate. However, considerable, random rotation in the basal plane and random out of plane tilts of about ±3–4$ are evident. The orientation variations were traced to the Si interface, where crystallites and an amorphous-like background were present. A strong relationship between these phenomena and substrates containing Si is established by comparing the present growth results with those reported elsewhere. Crystalline quality of the overgrown GaN on the AIN layer is described, with suggestions for the relation between surface pyramids or peaks and the mis-oriented buffer layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 113
Copyright
Copyright © Materials Research Society 1997

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References

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