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A Microscopical and Statistical Study of Electromigration Damage and Failure in Al-4wt.%Cu Tracks

Published online by Cambridge University Press:  15 February 2011

W. C. Shih ,
T. C. Denton  and
A. L. Greer
W. C. Shih
Affiliation:
University of Cambridge, Department of Materials Science and Metallurgy, Pembroke Street, Cambridge CB2 3QZ, United Kingdom
T. C. Denton
Affiliation:
BNR Europe Limited, London Road, Harlow, Essex, CM17 9NA, United Kingdom
A. L. Greer
Affiliation:
University of Cambridge, Department of Materials Science and Metallurgy, Pembroke Street, Cambridge CB2 3QZ, United Kingdom
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Abstract

We report a statistical analysis of electromigration (EM) induced damage and failure in unpassivated 1.4 mm long Al-4wt%Cu interconnects. The populations of damage sites of various types observed microscopically in life-tested samples are correlated with track width (1.1, 1.5 and 2.1 μm), temperature (200, 230, 260 and 300°C), current density (1, 2 and 3 × 1010 A m−2) and lifetest data. Some implications for damage and failure mechanisms are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 265: Symposium H – Materials Reliability in Microelectronics II , 1992 , 101
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

1. Greer, A.L. and Shih, W.C., “Microstructure and the development of electromigration damage in narrow interconnects”, in this volume.Google Scholar