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Microscopic Study Of The Hydrogen Diffusion In III-V Semiconductors

Published online by Cambridge University Press:  10 February 2011

A. Burchard ,
M. Deicher ,
D. Forkel-Wirth ,
M. Knopf ,
R. Magerle ,
A. STötzler ,
V. N. Fedoseyev ,
V. I. Mishin  and
The Isolde-Collaboration
A. Burchard
Affiliation:
Fakultät für Physik, Universität Konstanz, D-78457 Konstanz, Germany
M. Deicher
Affiliation:
Fakultät für Physik, Universität Konstanz, D-78457 Konstanz, Germany
D. Forkel-Wirth
Affiliation:
CERN / PPE, CH-1211 Geneva 23, Switzerland
M. Knopf
Affiliation:
Fakultät für Physik, Universität Konstanz, D-78457 Konstanz, Germany
R. Magerle
Affiliation:
Universität Bayreuth, Physikalische Chemie, D-95440 Bayreuth, Germany
A. STötzler
Affiliation:
Fakultät für Physik, Universität Konstanz, D-78457 Konstanz, Germany
V. N. Fedoseyev
Affiliation:
Institute of Spectroscopy, 142092 Troitzk, Russia
V. I. Mishin
Affiliation:
Institute of Spectroscopy, 142092 Troitzk, Russia
The Isolde-Collaboration
Affiliation:
CERN / PPE, CH-1211 Geneva 23, Switzerland
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Abstract

We report on experiments which observe on a microscopic scale the migration of isolated hydrogen in InP, GaAs, and InAs. Using the radioactive acceptor 117Cd, Cd-H pairs have been formed in these III-V semiconductors. After the decay of 117Cd to 117In, H is no longer bound to an acceptor and can diffuse freely. This diffusion has been observed by perturbed yy angular correlation (PAC) spectroscopy. At 10 K, the occupation of two different lattice sites by hydrogen has been observed. First results on the diffusion of hydrogen will be discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 513: Symposium H – Hydrogen in Semiconductors and Metals , 1998 , 171
Copyright
Copyright © Materials Research Society 1998

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References

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