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Microscopic Analysis of the Behavior of Interstitial and Precipitated Oxygen During Intrinsic Gettering in Si

Published online by Cambridge University Press:  26 February 2011

Qing Sun ,
J. Lagowski  and
H. C. Gatos
Qing Sun
Affiliation:
Massachusetts Institute of Technology, Cambridge, MA 02139
J. Lagowski
Affiliation:
Massachusetts Institute of Technology, Cambridge, MA 02139
H. C. Gatos
Affiliation:
Massachusetts Institute of Technology, Cambridge, MA 02139
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Abstract

We have used FTIR spectrum processing to analyze the behavior of interstitial and precipitated oxygen during the intrinsic gettering process. The kinetics of precipitation and the microscopic growth characteristics of precipitates were compared with a theoretical model based on diffusion controlled precipitation process. The annealing time dependence of precipitate size has been found to follow the relation of r = tn with n = 0.7.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 104 , 1987 , 205
Copyright
Copyright © Materials Research Society 1988

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References

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