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Micro-RBS Analysis of Masklessly Fabricated Structures

Published online by Cambridge University Press:  25 February 2011

A. Kinomura ,
M. Takai ,
T. Matsuo ,
M. Satou ,
M. Kiuchi ,
K. Fujii  and
S. Namba
A. Kinomura
Affiliation:
Faculty of Engineering Science and Research Center for Extreme Materials, Osaka University, Toyonaka, Osaka 560, Japan
M. Takai
Affiliation:
Faculty of Engineering Science and Research Center for Extreme Materials, Osaka University, Toyonaka, Osaka 560, Japan
T. Matsuo
Affiliation:
Faculty of Engineering Science and Research Center for Extreme Materials, Osaka University, Toyonaka, Osaka 560, Japan
M. Satou
Affiliation:
Government Industrial Research Institute Osaka, Ikeda, Osaka 563, Japan
M. Kiuchi
Affiliation:
Government Industrial Research Institute Osaka, Ikeda, Osaka 563, Japan
K. Fujii
Affiliation:
Government Industrial Research Institute Osaka, Ikeda, Osaka 563, Japan
S. Namba
Affiliation:
Faculty of Engineering Science and Research Center for Extreme Materials, Osaka University, Toyonaka, Osaka 560, Japan
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Abstract

Rutherford backscattering (RBS) analysis of small-sized structures, fabricated by laser chemical vapor deposition (LCVD) with a focused laser beam and ion implantation with a focused ion beam (FIB), has been performed by a microprobe with focused 1.5 MeV helium ions. Micro-RBS spectra and RBS-mapping images revealed a local distribution of masklessly deposited Mo layers on GaAs and local doses of masklessly implanted Au atoms in Si.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 128: Symposium A – Processing and Characterization of Materials Using Ion Beams , 1988 , 743
Copyright
Copyright © Materials Research Society 1989

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References

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