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Microcrystalline Silicon Thin Film Growth by Electron Cyclotron Resonance Chemical Vapour Deposition at 80°C for Plastic Application Ian

Published online by Cambridge University Press:  01 February 2011

Ian Y.Y. Bu ,
A.J. Flewitt ,
J Robertson  and
W.I. Milne
Ian Y.Y. Bu
Affiliation:
Cambridge University Engineering Department, Trumpington Street, Cambridge, XB2 1PZ, UK
A.J. Flewitt
Affiliation:
Cambridge University Engineering Department, Trumpington Street, Cambridge, XB2 1PZ, UK
J Robertson
Affiliation:
Cambridge University Engineering Department, Trumpington Street, Cambridge, XB2 1PZ, UK
W.I. Milne
Affiliation:
Cambridge University Engineering Department, Trumpington Street, Cambridge, XB2 1PZ, UK
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Abstract

Microcrystalline silicon deposited at low temperatures (<150°C) is a candidate material for use as the channel layer in thin film transistors deposited on plastic substrates. This would enable driver electronics to be integrated onto cheap flexible AMLCD panel.

In this study microcrystalline silicon was deposited by Electron Cyclotron Resonance Plasma Enhanced chemical Vapour Deposition (ECR-PECVD) at a temperature of 80°C, compatible with most plastic such as PET and PEN. A source gas mixture of SiH4 and H2 was employed. The structural and optical properties of samples deposited under a range of deposition conditions were measured.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 762: Symposium A – Amorphous and Nanocrystalline Silicon-Based Films – 2003 , 2003 , A5.2
Copyright
Copyright © Materials Research Society 2003

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