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MFMOS Capacitor with Pb5Ge3O11 Thin Film for One Transistor Ferroelectric Memory Applications

Published online by Cambridge University Press:  10 February 2011

T. K. Li ,
S. T. Hsu ,
J. J. Lee ,
Y. F. Gao  and
M. Engelhard
T. K. Li
Affiliation:
Sharp Laboratories of America, Inc, 5700 NW Pacific Rim Blvd. Camas, WA 98607
S. T. Hsu
Affiliation:
Sharp Laboratories of America, Inc, 5700 NW Pacific Rim Blvd. Camas, WA 98607
J. J. Lee
Affiliation:
Sharp Laboratories of America, Inc, 5700 NW Pacific Rim Blvd. Camas, WA 98607
Y. F. Gao
Affiliation:
Pacific Northwest National Laboratory, 902 Battelle Boulevard, Richland, WA 99352
M. Engelhard
Affiliation:
Pacific Northwest National Laboratory, 902 Battelle Boulevard, Richland, WA 99352
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Abstract

A ferroelectric Pb5Ge3O11 thin film with a low dielectric constant is proposed for application in one transistor ferroelectric memories. A strong depolarization voltage on the ferroelectric capacitor with MIFSFET structures diminishes the remanent polarization significantly and, therefore, the low dielectric constant becomes very important to widen the memory window. A memory window of 3V was estimated for the MFMOS memory structure with 2000Å ferroelectric Pb5Ge3O11 and a 100Å gate oxide. In the second part of this paper, Pb5Ge3O11 films deposited on Ir/Ti/SiO2/Si substrates, by using MOCVD system, was demonstrated. Germanium ethoxide, Ge(OC2H5)4, and lead bis-tetramethylheptadione, Pb(thd)2, were used as the MOCVD precursors. The film composition, phase formation, microstructure and ferroelectric properties are reported. The c-axis oriented Pb5Ge3O11 thin films prepared by MOCVD and RTP post-annealing showed a square ferroelectric hysteresis loop with Pr of 2.83 μC/cm2 and EC of 49 kV/cm. A low leakage current of 7.5 × 10−7 A/cm2 at 100 kV/cm and low dielectric constant of 41 were also demonstrated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 596: Symposium Y – Ferroelectric Thin Films VIII , 1999 , 443
Copyright
Copyright © Materials Research Society 2000

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