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MeV Ion Beam Bombardments Effects on the Thermoelectric Properties of Zn4Sb3 / CeFe(4-x)CoxSb12 Nano-Layered Superlattices

Published online by Cambridge University Press:  26 February 2011

S. Budak
Affiliation:
sbudak@cim.aamu.edu, Alabama A&M University, Center for Irradiation of Materials, 4900 Meridian Street, P.O. Box 1447, Huntsville, AL, 35762, United States, 256-372-5894, 256-372-5868
C. C. Smith
Affiliation:
cydale.smith@msfc.nasa.gov, NASA, MSFC, Huntsville, AL, 35805, United States
B. Zheng
Affiliation:
bangke@cim.aamu.edu, Alabama A&M University, Center for Irradiation of Materials, 4900 Meridian Street, P.O. Box 1447, Huntsville, AL, 35762, United States
C. I. Muntele
Affiliation:
claudiu@cim.aamu.edu, Alabama A&M University, Center for Irradiation of Materials, 4900 Meridian Street, P.O. Box 1447, Huntsville, AL, 35762, United States
R. L. Zimmerman
Affiliation:
rlzimm@cim.aamu.edu, Alabama A&M University, Center for Irradiation of Materials, 4900 Meridian Street, P.O. Box 1447, Huntsville, AL, 35762, United States
D. ILA
Affiliation:
ila@cim.aamu.edu, Alabama A&M University, Center for Irradiation of Materials, 4900 Meridian Street, P.O. Box 1447, Huntsville, AL, 35762, United States
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Abstract

We prepared multilayers of semiconducting half-heusler β-Zn4Sb3 and skutterudites CeFe(4-x)CoxSb12 compound thin films by ion beam assisted deposition (IBAD) system for the application of thermoelectric (TE) materials. Rutherford backscattering spectrometry (RBS) was used to analyze the composition of thin films. The thin films were then bombarded by 5 MeV Si ions for generation of nanodots in the films. We measured the cross-plane thermal conductivity by a house developed 3ω-method system, cross-plane Seebeck coefficient by a (MMR) Seebeck system, and cross plane electrical conductivity of these nanolayered systems by a (MMR) Hall system before and after bombardment. Both β-Zn4Sb3 and CeFe(4-x)CoxSb12 systems have been identified as promising thermoelectric materials for the application of thermal-to-electrical energy conversion. The nanodots produced by MeV ion beam can cause significant change in both electrical and thermal conductivity of thin films, thus improving the efficiency. The MeV ion-beam bombardment resulted in decrease in the thermal conductivity of thin films and increase in the efficiency of thermal-to-electrical energy conversion.

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

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References

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