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MeV Boron Implantation and Masking

Published online by Cambridge University Press:  22 February 2011

James P. Lavine ,
A. J. Filo ,
D. L. Losee ,
P. A. Guidash ,
S.-T. Lee ,
G. H. Braunstein ,
S. L. Kosman  and
H. Kyan
James P. Lavine
Affiliation:
Microelectronics Technology Division, Eastman Kodak Company, Rochester, NY 14650-2008
A. J. Filo
Affiliation:
Analytical Technology Division, Eastman Kodak Company, Rochester, NY 14650-2155
D. L. Losee
Affiliation:
Microelectronics Technology Division, Eastman Kodak Company, Rochester, NY 14650-2008
P. A. Guidash
Affiliation:
Microelectronics Technology Division, Eastman Kodak Company, Rochester, NY 14650-2008
S.-T. Lee
Affiliation:
Analytical Technology Division, Eastman Kodak Company, Rochester, NY 14650-2155
G. H. Braunstein
Affiliation:
Analytical Technology Division, Eastman Kodak Company, Rochester, NY 14650-2155
S. L. Kosman
Affiliation:
Microelectronics Technology Division, Eastman Kodak Company, Rochester, NY 14650-2008
H. Kyan
Affiliation:
Microelectronics Technology Division, Eastman Kodak Company, Rochester, NY 14650-2008
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Abstract

Boron depth distributions are reported for MeV implants into silicon through a variety of masking materials. Silicon is implanted with boron through a 0.1-µm-thick layer of thermally grown silicon dioxide. Secondary ion mass spectrometry (SIMS) shows the projected ranges agree within 10% with data reported in the literature and with results from the computer program TRIM. Silicon dioxide, photoresist, and metal layers are used to mask the high-energy boron implants. The SIMS results indicate that TRIM overestimates the energy loss of MeV boron ions as they pass through photoresist and/or silicon dioxide.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 316: Symposium A – Materials Synthesis and Processing Using Ion Beams , 1993 , 361
Copyright
Copyright © Materials Research Society 1994

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References

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