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Metastable Optical Absorption and Paramagnetism in Hydrogenated Amorphous Silicon

Published online by Cambridge University Press:  26 February 2011

J. M. Viner ,
C. Lee ,
W. D. Ohlsen  and
P. C. Taylor
J. M. Viner
Affiliation:
Department of Physics, University of Utah, Salt Lake City, UT 84112
C. Lee
Affiliation:
Department of Physics, University of Utah, Salt Lake City, UT 84112
W. D. Ohlsen
Affiliation:
Department of Physics, University of Utah, Salt Lake City, UT 84112
P. C. Taylor
Affiliation:
Department of Physics, University of Utah, Salt Lake City, UT 84112
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Abstract

After rapid cooling from 210°C a characteristic electron spin resonance (ESR) and a characteristic below-gap optical absorption have been observed to grow with time at room temperature in hydrogenated amorphous silicon (a-Si:H). Both the increased ESR and the increased optical absorption anneal at temperatures above about 100°C. These unexpected results may have important consequences for our understanding of the electronic properties of a-Si:H.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 118: Symposium E – Amorphous Silicon Technology , 1988 , 309
Copyright
Copyright © Materials Research Society 1988

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References

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