Hostname: page-component-848d4c4894-xm8r8 Total loading time: 0 Render date: 2024-07-07T21:01:06.849Z Has data issue: false hasContentIssue false
  • English
  • Français

Metastable defects by low-intensity pulsed illumination of hydrogenated amorphous silicon

Published online by Cambridge University Press:  17 March 2011

Stephan Heck  and
Howard M. Branz
Stephan Heck
Affiliation:
National Renewable Energy Laboratory, Golden, CO, 80401
Howard M. Branz
Affiliation:
National Renewable Energy Laboratory, Golden, CO, 80401
Get access

Abstract

Illumination of hydrogenated amorphous silicon (a-Si:H) samples with short (e.g., 40 microsecond) pulses of red light produces a smaller metastable absorption increase in the defect region than continuous illumination of the same intensity for the same integrated exposure time. The defect absorption was measured at 1.3 and 1.4 eV by use of the constant photocurrent method (CPM). This smaller degradation is also observed in the photoconductivity. Careful measurement of the film temperature with several techniques confirm that the film temperature rises by less than 5 °C, under continuous illumination. However, several experiments suggest that the suppressed degradation during pulsed illumination is caused primarily by annealing during the dark time between pulses, even at 15 to 26 °C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 609: Symposium A – Amorphous & Heterogeneous Silicon Thin Films – 2000 , 2000 , A3.2
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Staebler, D. L. and Wronski, C. R., Appl. Phys. Lett. 31, 292 (1977).Google Scholar
2.See, e.g., Amorphous and Microcrystalline Silicon Technology-1997, 467, edited by Wagner, S., Hack, M., Schiff, H., Schropp, R., and Shimizu, I. (Materials Research Society, Pittsburgh, 1997).Google Scholar
3. Stutzmann, M., Jackson, W. B., and Tsai, C. C., Phys. Rev. B 32, 23 (1985).Google Scholar
4. Branz, H. M., Phys. Rev. B 59, 5498 (1999).Google Scholar
5. Pashmakov, B. and Fritzsche, H., Phys. Rev. Lett. 79, 5704 (1998).Google Scholar