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Metastable Defect Kinetics in Hydrogen Passivated Polycrystalline Silicon

Published online by Cambridge University Press:  16 February 2011

N. H. Nickel ,
R. A. Street ,
W. B. Jackson  and
N. M. Johnson
N. H. Nickel
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, California 94304
R. A. Street
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, California 94304
W. B. Jackson
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, California 94304
N. M. Johnson
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, California 94304
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Abstract

The temperature dependence of the dark conductivity, σD, of unhydrogenated and hydrogen passivated polycrystalline silicon (poly-Si) films was Measured. While σD of unhydrogenated poly-Si did not exhibit any influence of thermal treatment prior to the measurement, striking effects were observed in hydrogenated poly-Si films. Below 268 K a cooling-rate dependent metastable change of σD is observed. The dark conductivity increases by more than 8 orders of magnitude. This frozen-in state is metastable: Annealing and a slow cool restore the temperature dependence of the relaxed state. The time and temperature dependence of the relaxation reveal that this process is thermally activated with 0.74 eV. The lack of the quenching metastability in unhydrogenated poly-Si is direct evidence that the metastable changes in σD are due to the formation and dissociation of an electrically active hydrogen complex, in the grain-boundary regions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 336: Symposium A – Amorphous Silicon Technology - 1994 , 1994 , 257
Copyright
Copyright © Materials Research Society 1994

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References

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