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Metastable Defect Formation by Hydrogen Relocation and Rebonding

Published online by Cambridge University Press:  15 February 2011

Qiming Li  and
R. Biswas
Qiming Li
Affiliation:
Department of Physics and Astronomy and Microelectronics Research Center, Iowa State University, Ames, Iowa 50011
R. Biswas
Affiliation:
Department of Physics and Astronomy and Microelectronics Research Center, Iowa State University, Ames, Iowa 50011
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Abstract

Molecular dynamics with the tight-binding approach are utilized to examine the fundamental process of dangling bond creation via the rebonding of H from Si-H bonds to weak Si-Si bonds. The defect formation energy is found to strongly correlate with the bond-length of the weak Si-Si bond, indicating that the distribution of weak Si-Si bonds controls the total defect density. Rate equations for thermally generated and light-induced defects are developed and utilized to calculate the equilibrium and saturated defect density. The results agree well with experimental data.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 377: Symposium A – Amorphous Silicon Technology 1995 , 1995 , 407
Copyright
Copyright © Materials Research Society 1995

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References

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