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Metastability of Luminescent Porous Silicon

Published online by Cambridge University Press:  28 February 2011

S. Mtyazaki ,
K. Sakamoto ,
K. Shiba  and
M. Hirose
S. Mtyazaki
Affiliation:
Department of Electrical Engineering, Hiroshima University Higashi-Hiroshima724, Japan
K. Sakamoto
Affiliation:
Department of Electrical Engineering, Hiroshima University Higashi-Hiroshima724, Japan
K. Shiba
Affiliation:
Department of Electrical Engineering, Hiroshima University Higashi-Hiroshima724, Japan
M. Hirose
Affiliation:
Department of Electrical Engineering, Hiroshima University Higashi-Hiroshima724, Japan
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Abstract

Photoluminescence from l–3μm thick porous Si layers prepared by anodization of p-type c-Si wafers and subsequent chemical etching exhibits an anomalous temperature dependence and light-induced degradation. The luminescence intensity is almost quenched at temperatures below 30K and recovered by laser irradiation at 48K. This quenching phenomenon is not observed for PS thicker than 10μm. The luminescence fatigue is partially recovered by annealing at 150°C for 5min during which no further oxidation takes place. These observations are interpreted in terms of the structural metastability of hydrogen-terminated porous Si.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 283: Symposium F – Microcrystalline Semiconductors–Materials Science and Devices , 1992 , 299
Copyright
Copyright © Materials Research Society 1993

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References

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