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Metalorganic Chemical Vapor Deposition of High Quality GaAs and AlGaAs Using Tertiarybutylarsine

Published online by Cambridge University Press:  28 February 2011

G. Haacke ,
S. P. Watkins ,
H. Burkhard ,
C. J. Calbick  and
J. Quick
G. Haacke
Affiliation:
American Cyanamid Company, Chemical Research Division, Stamford, CT 06904
S. P. Watkins
Affiliation:
American Cyanamid Company, Chemical Research Division, Stamford, CT 06904
H. Burkhard
Affiliation:
American Cyanamid Company, Chemical Research Division, Stamford, CT 06904
C. J. Calbick
Affiliation:
American Cyanamid Company, Chemical Research Division, Stamford, CT 06904
J. Quick
Affiliation:
American Cyanamid Company, Chemical Research Division, Stamford, CT 06904
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Abstract

This paper discusses recent improvements achieved in the growth of epitaxial layers of GaAs and AlGaAs using the liquid arsine substitute tertiarybutylarsine (TBA) and metal alkyls. The high purity TBA now available yields undoped GaAs with residual donor/acceptor concentrations in the low 1014 cm−3 range. Under optimized growth conditiorp the layers are either n-type and have 77*K mobilities up to 85,000 cm2 //Vs or they are compensated or p-type. For aluminum gallium arsenide, layers grown with TBA have properties similar to arsine-grown material as demonstrated by low temperature photoluminescence (PL). The PL efficiencies and line widths of the TBA-grown AlGaAs samples are comparable to those prepared with arsine.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 145: Symposium A – III-V Heterostructures for Electronic/Photonic Devices , 1989 , 217
Copyright
Copyright © Materials Research Society 1989

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