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METALLIC EPITAXY OF TRANSITION METALS ON SEMICONDUCTORS

Published online by Cambridge University Press:  28 February 2011

G.A. Prinz
G.A. Prinz*
Affiliation:
Code 6635, Naval Research Laboratory, Washington, DC 20375-5000 USA
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Abstract

Although epitaxial growth of single crystal metal films was reported at least five decades ago, the availability of modern ultra high vacuum technology and sensitive characterization of thin film properties has opened many new directions in this area of materials research. Of considerable interest is the utilization of the interfacial forces associated with epitaxial growth to stabilize structures which may exist in a metastable minimumenergy configuration. The problem of metastable structural phases of elemental metals will be discussed with particular emphasis upon the 3-d transition metals. In these materials the magnetic properties both depend dramatically upon the structural phase and contribute toward determining the stable minimum energy configuration.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 56: Symposium H – Layered Structures and Epitaxy , 1985 , 139
Copyright
Copyright © Materials Research Society 1986

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