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Metal-insulator transition and the character of the hole impurity bands in ferromagnetic GaMnAs disordered dilute magnetic semiconductor

Published online by Cambridge University Press:  15 March 2011

R. da Silva Neves ,
A. Ferreira da Silva  and
R. Kishore
R. da Silva Neves
Affiliation:
Instituto de Física, Universidade Federal da Bahia, 40210 340 Salvador, Bahia, Brazil
A. Ferreira da Silva
Affiliation:
Instituto de Física, Universidade Federal da Bahia, 40210 340 Salvador, Bahia, Brazil
R. Kishore
Affiliation:
Instituto Nacional de Pesquisas Espaciais –INPE/LAS 12210 970 São José dos Campos, São Paulo, Brazil
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Abstract

The study of ferromagnetic transition of Ga1-xMnxAs dilute magnetic semiconductor (DMS) is much of interest mainly due to the potential application in spintronic devices. Based on the mean field approach we present the average contribution of the hole spins by considering the holes in an impurity band (IB) and the critical concentration for the metal-insulator transition (MIT) in this semiconductor. In order to calculate the mean configuration of spins of impurities Mn+2 we use a formalism proposed for a spatial disordered system. The results for the metallic densities around the MIT transition are compared to experimental results and other theoretical findings.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1118: Symposium K – Magnetic Nanostructures by Design , 2008 , 1118-K05-08
Copyright
Copyright © Materials Research Society 2009

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