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Metal-Germanium Contacts and Germanide Formation

Published online by Cambridge University Press:  22 February 2011

E. D. Marshall ,
C. S. Wu ,
C. S. Pai ,
D. M. Scott  and
S. S. Lau
E. D. Marshall
Affiliation:
Department of Electrical Engineering and Computer Sciences, University of California at San Diego, La Jolla, CA 92093
C. S. Wu
Affiliation:
Present affiliation: AT&T Bell Labs, Murray Hill, N.J.07974
C. S. Pai
Affiliation:
Department of Electrical Engineering and Computer Sciences, University of California at San Diego, La Jolla, CA 92093
D. M. Scott
Affiliation:
Department of Electrical Engineering and Computer Sciences, University of California at San Diego, La Jolla, CA 92093
S. S. Lau
Affiliation:
Department of Electrical Engineering and Computer Sciences, University of California at San Diego, La Jolla, CA 92093
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Abstract

In this study, we survey germanide formation and characterize Schottky- barrier properties for a number of representative metals on Ge (Al, Ag, Au, Er, Ni, Pd, Pt, Ta and Ti). It is found that the germanide formation characteristics (sequence of phase formation, kinetics, moving species) are similar to those of the corresponding silicides. The Schottky-barrier heights, however, are all similar and centered around 0.59 eV arida re relatively insensitive to the metallization.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 47: Symposium C – Thin Films: The Relationship of Structure to Properties , 1985 , 161
Copyright
Copyright © Materials Research Society 1985

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References

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