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Metal-Ferroelectric-Semiconductor Characteristics of BaMgF4 Films on p-Silicon

Published online by Cambridge University Press:  15 February 2011

T. S. Kalkur ,
J. R. Kulkarni ,
R. Y. Kwor ,
L. Levinson  and
L. Kammerdiner
T. S. Kalkur
Affiliation:
Microelectronics Research Laboratories, Department of Electrical and Computer Engineering, University of Colorado at Colorado Springs, CO 80933
J. R. Kulkarni
Affiliation:
Presently with National Semiconductors, Santa Clara, CA.
R. Y. Kwor
Affiliation:
Microelectronics Research Laboratories, Department of Electrical and Computer Engineering, University of Colorado at Colorado Springs, CO 80933
L. Levinson
Affiliation:
Department of Physics, University of Colorado at Colorado Springs, CO 80933
L. Kammerdiner
Affiliation:
Ramtron Corporation, Colorado Springs.
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Abstract

Capacitance-voltage characterstics of BaMgF4 film deposited in an ion-assisted deposition system shows hysteresis and the direction of hysteresis corresponds to ferroelectric polarization. Electrical characterization of the films shows that these films can be used to implement non-destructive read-out non-volatile ferroelectric memories. These films were found to dissolve in water and other aqueous solutions. In order to overcome this problem, a suitable capping layer like zirconium oxide and amorphous silicon was deposited on BMF films. The shift in threshold voltage did not change significantly due to the incorporation of the capping layer. The shift in threshold voltage was found to be temperature dependent and this might be due to ionic conduction in fluorides.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 230: Symposium R – Phase Transformation Kinetics in Thin Films , 1991 , 315
Copyright
Copyright © Materials Research Society 1992

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